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NTD3055-094 Dataheets PDF



Part Number NTD3055-094
Manufacturers ON Semiconductor
Logo ON Semiconductor
Description Power MOSFET
Datasheet NTD3055-094 DatasheetNTD3055-094 Datasheet (PDF)

NTD3055-094, NVD3055-094 MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower and Tighter VSD • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • Thes.

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NTD3055-094, NVD3055-094 MOSFET – Power, N-Channel, DPAK/IPAK 12 A, 60 V Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Lower RDS(on) • Lower VDS(on) • Lower and Tighter VSD • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable • These Devices are Pb−Free and are RoHS Compliant Typical Applications • Power Supplies • Converters • Power Motor Controls • Bridge Circuits MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range VDSS VDGR VGS VGS ID ID IDM PD TJ, Tstg 60 Vdc 60 Vdc Vdc "20 "30 12 10 45 48 0.32 2.1 1.5 −55 to +175 Adc Apk W W/°C W W °C Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds EAS RqJC RqJA RqJA TL 61 mJ 3.13 °C/W 71.4 100 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in. pad size. © Semiconductor Components Industries, LLC, 2014 1 May, 2019 − Rev. 9 http://onsemi.com V(BR)DSS 60 V RDS(on) TYP 94 mW ID MAX 12 A D N−Channel G S 4 4 12 3 DPAK CASE 369C STYLE 2 1 2 3 IPAK CASE 369D STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENTS 4 Drain 4 Drain AYWW 55 094G AYWW 55 3094G 1 Gate 2 Drain 3 Source 12 3 Gate Drain Source A 55094 Y WW G = Assembly Location* = Device Code = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet. Publication Order Number: NTD3055−094/D NTD3055−094, NVD3055−094 2. When surface mounted to an FR4 board using the minimum recommended pad size. http://onsemi.com 2 NTD3055−094, NVD3055−094 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc) Temperature Coefficient (Positive) V(BR)DSS 60 68 − 54.4 Vdc − − mV/°C Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C) Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc) Threshold Temperature Coefficient (Negative) IDSS IGSS VGS(th) mAdc − − 1.0 − − 10 − − ±100 nAdc Vdc 2.0 2.9 4.0 − 6.3 − mV/°C Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 6.0 Adc) RDS(on) mW − 84 94 Static Drain−to−Source On−Voltage (Note 3) (VGS = 10 Vdc, ID = 12 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C) VDS(on) Vdc − 0.85 1.35 − 0.77 − Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc) gFS − 6.7 − mhos DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance (VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Ciss Coss Crss − 323 450 pF − 107 150 − 34 70 SWITCHING CHARACTERISTICS (Note 4) Turn−On Delay Time td(on) − 7.7 15 ns Rise Time Turn−Off Delay Time (VDD = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3) tr td(off) − 32.3 70 − 25.2 50 Fall Time tf − 23.9 50 Gate Charge (VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) (Note 3) QT − 10.9 20 nC Q1 − 3.1 − Q2 − 4.2 − SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (IS = 12 Adc, VGS = 0 Vdc) (Note 3) VSD (IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C) − 0.94 1.15 Vdc − 0.82 − Reverse Recovery Time (IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3) trr − 33.1 − ns ta − 24 − tb − 8.9 − Reverse Recovery Stored Charge QRR − 0.047 − mC Product parametric performance is ind.


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