Power MOSFET. NTD3055-094 Datasheet

NTD3055-094 MOSFET. Datasheet pdf. Equivalent

NTD3055-094 Datasheet
Recommendation NTD3055-094 Datasheet
Part NTD3055-094
Description Power MOSFET
Feature NTD3055-094; www.DataSheet4U.com NTD3055−094 Power MOSFET 12 A, 60 V N−Channel DPAK Designed for low voltage, hi.
Manufacture ON Semiconductor
Datasheet
Download NTD3055-094 Datasheet




ON Semiconductor NTD3055-094
NTD3055-094, NVD3055-094
Power MOSFET
12 A, 60 V, N−Channel DPAK/IPAK
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
Lower RDS(on)
Lower VDS(on)
Lower and Tighter VSD
Lower Diode Reverse Recovery Time
Lower Reverse Recovery Stored Charge
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (tpv10 ms)
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 100°C
− Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C
Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1)
Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS
VDGR
VGS
VGS
ID
ID
IDM
PD
TJ, Tstg
60
60
"20
"30
Vdc
Vdc
Vdc
12
10
45
48
0.32
2.1
1.5
−55 to
+175
Adc
Apk
W
W/°C
W
W
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH
IL(pk) = 11 A, VDS = 60 Vdc)
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient (Note 1)
− Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering
Purposes, 1/8from case for 10 seconds
EAS
RqJC
RqJA
RqJA
TL
61 mJ
3.13 °C/W
71.4
100
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq in. pad size.
2. When surface mounted to an FR4 board using the minimum recommended
pad size.
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V(BR)DSS
60 V
RDS(on) TYP
94 mW
ID MAX
12 A
D
N−Channel
G
S
4
4
12
3
DPAK
CASE 369C
STYLE 2
1
2
3
IPAK
CASE 369D
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENTS
4
Drain
4
Drain
1
Gate
2
Drain
3
Source
12 3
Gate Drain Source
A
55094
Y
WW
G
= Assembly Location*
= Device Code
= Year
= Work Week
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
July, 2014 − Rev. 9
1
Publication Order Number:
NTD3055−094/D



ON Semiconductor NTD3055-094
NTD3055−094, NVD3055−094
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
Symbol
Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
(VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
Vdc
60 68
− 54.4 − mV/°C
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3)
(VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS
IGSS
VGS(th)
mAdc
− − 1.0
− − 10
±100
nAdc
Vdc
2.0 2.9 4.0
− 6.3 − mV/°C
Static Drain−to−Source On−Resistance (Note 3)
(VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
mW
− 84 94
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 10 Vdc, ID = 12 Adc)
(VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
VDS(on)
Vdc
− 0.85 1.35
− 0.77 −
Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS − 6.7 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
Ciss
Coss
Crss
− 323 450 pF
− 107 150
− 34 70
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
− 7.7 15
ns
Rise Time
Turn−Off Delay Time
(VDD = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc, RG = 9.1 W) (Note 3)
tr
td(off)
− 32.3 70
− 25.2 50
Fall Time
tf − 23.9 50
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc,
VGS = 10 Vdc) (Note 3)
QT
− 10.9 20
nC
Q1 − 3.1 −
Q2 − 4.2 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 12 Adc, VGS = 0 Vdc) (Note 3)
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
VSD
0.94 1.15
Vdc
− 0.82 −
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms) (Note 3)
trr
− 33.1 −
ns
ta − 24 −
tb − 8.9 −
Reverse Recovery Stored Charge
QRR
− 0.047 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
4. Switching characteristics are independent of operating junction temperatures.
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ON Semiconductor NTD3055-094
NTD3055−094, NVD3055−094
TYPICAL CHARACTERISTICS
24
VGS = 10 V
20 9 V
8V
16
12
8
4
7V
6.5 V
6V
5.5 V
5V
4.5 V
0
012 34
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
5
24
VDS 10 V
20
16
12
8
TJ = 25°C
4 TJ = 100°C
0
TJ = −55°C
3 3.5 4 4.5 5 5.5
6
6.5
7 7.5
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 2. Transfer Characteristics
8
0.20
0.18
0.16
0.14
0.12
0.10
0.08
VGS = 10 V
TJ = 100°C
TJ = 25°C
0.20
0.18
0.16
0.14
0.12
0.10
0.08
VGS = 15 V
TJ = 100°C
TJ = 25°C
0.06
0.04
TJ = −55°C
0.06
0.04
TJ = −55°C
0.02 0.02
0
04
8 12 16 20 24
0
0 4 8 12 16 20 24
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
ID, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
2
1.8
ID = 6 A
VGS = 10 V
1.6
1.4
1000
VGS = 0 V
100
TJ = 150°C
1.2
10 TJ = 100°C
1
0.8
0.6
−50 −25 0 25 50 75 100 125 150 175
TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On−Resistance Variation with
Temperature
1
0 10 20 30 40 50 60
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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