Document
NTD3055-094, NVD3055-094
MOSFET – Power, N-Channel, DPAK/IPAK
12 A, 60 V
Designed for low voltage, high speed switching applications in power
supplies, converters and power motor controls and bridge circuits.
Features
• Lower RDS(on) • Lower VDS(on) • Lower and Tighter VSD • Lower Diode Reverse Recovery Time • Lower Reverse Recovery Stored Charge • NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies • Converters • Power Motor Controls • Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage
Drain−to−Gate Voltage (RGS = 10 MW)
Gate−to−Source Voltage − Continuous − Non−Repetitive (tpv10 ms)
Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms)
Total Power Dissipation @ TA = 25°C Derate above 25°C
Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2)
Operating and Storage Temperature Range
VDSS VDGR
VGS VGS
ID ID IDM PD
TJ, Tstg
60 Vdc
60 Vdc
Vdc "20 "30
12 10 45
48 0.32 2.1 1.5
−55 to +175
Adc
Apk W W/°C W W °C
Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH IL(pk) = 11 A, VDS = 60 Vdc)
Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RqJC RqJA RqJA
TL
61
mJ
3.13 °C/W 71.4 100
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 0.5 sq in. pad size.
© Semiconductor Components Industries, LLC, 2014
1
May, 2019 − Rev. 9
http://onsemi.com
V(BR)DSS 60 V
RDS(on) TYP 94 mW
ID MAX 12 A
D
N−Channel G
S 4
4
12 3
DPAK CASE 369C
STYLE 2
1 2 3
IPAK CASE 369D
STYLE 2
MARKING DIAGRAM & PIN ASSIGNMENTS
4 Drain
4 Drain
AYWW 55 094G AYWW 55 3094G
1 Gate
2 Drain
3 Source
12 3 Gate Drain Source
A 55094 Y WW G
= Assembly Location* = Device Code = Year = Work Week = Pb−Free Package
* The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package dimensions section on page 8 of this data sheet.
Publication Order Number: NTD3055−094/D
NTD3055−094, NVD3055−094
2. When surface mounted to an FR4 board using the minimum recommended pad size.
http://onsemi.com 2
NTD3055−094, NVD3055−094
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = 250 mAdc)
Temperature Coefficient (Positive)
V(BR)DSS
60
68
−
54.4
Vdc
−
−
mV/°C
Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage (Note 3) (VDS = VGS, ID = 250 mAdc)
Threshold Temperature Coefficient (Negative)
IDSS IGSS VGS(th)
mAdc
−
−
1.0
−
−
10
−
−
±100
nAdc
Vdc
2.0
2.9
4.0
−
6.3
−
mV/°C
Static Drain−to−Source On−Resistance (Note 3) (VGS = 10 Vdc, ID = 6.0 Adc)
RDS(on)
mW
−
84
94
Static Drain−to−Source On−Voltage (Note 3)
(VGS = 10 Vdc, ID = 12 Adc) (VGS = 10 Vdc, ID = 6.0 Adc, TJ = 150°C)
VDS(on)
Vdc
−
0.85 1.35
−
0.77
−
Forward Transconductance (Note 3) (VDS = 7.0 Vdc, ID = 6.0 Adc)
gFS
−
6.7
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance Output Capacitance Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc, f = 1.0 MHz)
Ciss Coss Crss
−
323
450
pF
−
107
150
−
34
70
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
td(on)
−
7.7
15
ns
Rise Time Turn−Off Delay Time
(VDD = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc, RG = 9.1 W) (Note 3)
tr td(off)
−
32.3
70
−
25.2
50
Fall Time
tf
−
23.9
50
Gate Charge
(VDS = 48 Vdc, ID = 12 Adc, VGS = 10 Vdc) (Note 3)
QT
−
10.9
20
nC
Q1
−
3.1
−
Q2
−
4.2
−
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 12 Adc, VGS = 0 Vdc) (Note 3)
VSD
(IS = 12 Adc, VGS = 0 Vdc, TJ = 150°C)
−
0.94 1.15
Vdc
−
0.82
−
Reverse Recovery Time
(IS = 12 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 3)
trr
−
33.1
−
ns
ta
−
24
−
tb
−
8.9
−
Reverse Recovery Stored Charge
QRR
−
0.047
−
mC
Product parametric performance is ind.