Power MOSFET
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NTD3055−150 Power MOSFET 9.0 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching ...
Description
www.DataSheet4U.com
NTD3055−150 Power MOSFET 9.0 A, 60 V
N−Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Features
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Pb−Free Packages are Available
Typical Applications
9.0 AMPERES, 60 VOLTS RDS(on) = 122 mW (Typ)
N−Channel D
Power Supplies Converters Power Motor Controls Bridge Circuits
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating Drain−to−Source Voltage Drain−to−Gate Voltage (RGS = 10 MW) Gate−to−Source Voltage − Continuous − Non−repetitive (tpv10 ms) Drain Current − Continuous @ TA = 25°C − Continuous @ TA = 100°C − Single Pulse (tpv10 ms) Total Power Dissipation @ TA = 25°C Derate above 25°C Total Power Dissipation @ TA = 25°C (Note 1) Total Power Dissipation @ TA = 25°C (Note 2) Operating and Storage Temperature Range Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, L = 1.0 mH, IL(pk) = 7.75 A, VDS = 60 Vdc) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 9.0 3.0 27 28.8 0.19 2.1 1.5 −55 to 175 30 Unit Vdc Vdc Vdc
S
MARKING DIAGRAMS
4 Drain DPAK CASE 369C STYLE 2 “SURFACE MOUNT” 4 AYW 3150 4 Drain 4 AYW 3150 DPAK−3 CASE 369D STYLE 2 “STRAIGHT LEAD” 1 2 3 1 2 3 Gate Drain Source
Adc Apk W W...
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