KAG00J007M-FGG2 MCP Memory Datasheet

KAG00J007M-FGG2 Datasheet, PDF, Equivalent


Part Number

KAG00J007M-FGG2

Description

MCP Memory

Manufacture

Samsung Electronics

Total Page 30 Pages
Datasheet
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KAG00J007M-FGG2
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MCP MEMORY
MCP Specification of
256Mb NAND*2 and 256Mb Mobile SDRAM
- 1 - Revision 0.6
October 2003

KAG00J007M-FGG2
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KAG00J007M-FGG2
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MCP MEMORY
Document Title
Multi-Chip Package MEMORY
256M Bit(32Mx8) Nand Flash*2 / 256M Bit(4Mx16x4Banks) Mobile SDRAM
Revision History
Revision No. History
0.0 Initial issue.
(512M NAND DDP C-Die_ Ver 1.0)
( 256M MSDRAM E‘-Die_Ver 0.5)
Draft Date
Remark
March 25, 2003 Advance
0.5 - Added Column address : page 37
- Changed the values of Icc
- Inserted Commercial Temperature
- Inserted DS 1/4 & 1/8 option in EMRS table.
- Changed default DS from full size to half size.
- Changed the comment related with tRDL & tDAL : page 35
- Corrected errata from tRC to tARFC in the table : page 33
- Corrected errata from tSRFC to tSRFX : page 45
- Corrected MRS table : page 38
June 3 , 2003 Preliminary
0.6 <Common>
- Changed the MSDRAM speed code of the MCP part number
from "X"(66MHz) to "2"(105MHz)
October 13 , 2003 Preliminary
<NAND Flash> .... ver 2.6
- Corrected functional block diagram : page 6
- Changed the maximum operation current : page 10
Read : Icc1 30mA --> 20mA
Program : Icc2 40mA --> 20mA
Erase : Icc3 40mA --> 20mA
- Added new definition of the number of invalid blocks : page 11
(Minimum 1004 valid blocks are guaranteed for each contiguous 128Mb
memory space.)
<Mobile SDRAM> .... ver 0.6
- Changed the value of tss : page 36
Note : For more detailed features and specifications including FAQ, please refer to Samsung’s web site.
http://samsungelectronics.com/semiconductors/products/products_index.html
The attached datasheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right
to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions about device. If you have
any questions, please contact the SAMSUNG branch office near you.
- 2 - Revision 0.6
October 2003


Features www.DataSheet4U.com KAG00J007M-FGG2 Ad vance Preliminary MCP MEMORY MCP Speci fication of 256Mb NAND*2 and 256Mb Mobi le SDRAM -1- Revision 0.6 October 200 3 www.DataSheet4U.com KAG00J007M-FGG2 Document Title Advance Preliminary MC P MEMORY Multi-Chip Package MEMORY 256 M Bit(32Mx8) Nand Flash*2 / 256M Bit(4M x16x4Banks) Mobile SDRAM Revision Hist ory Revision No. History 0.0 Initial is sue. (512M NAND DDP C-Die_ Ver 1.0) ( 2 56M MSDRAM E‘-Die_Ver 0.5) - Added Co lumn address : page 37 - Changed the va lues of Icc - Inserted Commercial Tempe rature - Inserted DS 1/4 & 1/8 option i n EMRS table. - Changed default DS from full size to half size. - Changed the comment related with tRDL & tDAL : page 35 - Corrected errata from tRC to tARF C in the table : page 33 - Corrected er rata from tSRFC to tSRFX : page 45 - Co rrected MRS table : page 38 - Changed the MSDRAM speed code of the MC P part number from "X"(66MHz) to "2"(10 5MHz) .... ver 2.6 - Corrected functional block diag.
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