AP4501GSD POWER MOSFET Datasheet

AP4501GSD Datasheet, PDF, Equivalent


Part Number

AP4501GSD

Description

N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET

Manufacture

Advanced Power Electronics

Total Page 7 Pages
Datasheet
Download AP4501GSD Datasheet


AP4501GSD
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Advanced Power
Electronics Corp.
AP4501GSD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
27mΩ
7A
-30V
49mΩ
-5A
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
7 -5
5.8 -4.2
40 -30
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200504042

AP4501GSD
www.DataSheet4U.com
AP4501GSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 27 mΩ
- - 50 mΩ
1 - 3V
- 12 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 13 nC
- 2 - nC
- 5 - nC
- 6 - ns
- 5 - ns
- 19 - ns
- 4 - ns
- 645 800 pF
- 150 - pF
- 95 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 16 - ns
- 10 - nC


Features www.DataSheet4U.com AP4501GSD Pb Free P lating Product Advanced Power Electron ics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switchin g Characteristic G2 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS( ON) ID D1 30V 27mΩ 7A -30V 49mΩ -5A D2 PDIP-8 S1 S2 G1 Description The A dvanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device d esign, low on-resistance and costeffect iveness. G1 G2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@ TA=70℃ IDM PD@TA=25℃ TSTG TJ Parame ter Drain-Source Voltage Gate-Source Vo ltage Continuous Drain Current Continuo us Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 40 2 0.016 -55 to 150 -55 to 150 P-channe l -30 ±20 -5 -4.2 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipat ion Linear Derating Factor Storage Temp erature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parame.
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