POWER MOSFET. AP4501GSD Datasheet

AP4501GSD MOSFET. Datasheet pdf. Equivalent

AP4501GSD Datasheet
Recommendation AP4501GSD Datasheet
Part AP4501GSD
Description N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET
Feature AP4501GSD; www.DataSheet4U.com AP4501GSD Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Dr.
Manufacture Advanced Power Electronics
Datasheet
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Advanced Power Electronics AP4501GSD
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4501GSD
Pb Free Plating Product
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching Characteristic
Description
D2
D2
D1
D1
PDIP-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
D1
30V
27mΩ
7A
-30V
49mΩ
-5A
D2
G1
S1
G2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-a
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
7 -5
5.8 -4.2
40 -30
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
200504042



Advanced Power Electronics AP4501GSD
www.DataSheet4U.com
AP4501GSD
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.03 - V/
- - 27 mΩ
- - 50 mΩ
1 - 3V
- 12 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 9 13 nC
- 2 - nC
- 5 - nC
- 6 - ns
- 5 - ns
- 19 - ns
- 4 - ns
- 645 800 pF
- 150 - pF
- 95 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=1.7A, VGS=0V
IS=7A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - 1.2 V
- 16 - ns
- 10 - nC



Advanced Power Electronics AP4501GSD
www.DataSheet4U.com
AP4501GSD
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5A
VGS=-4.5V, ID=-3A
-30 - - V
- -0.03 - V/
- - 49 mΩ
- - 75 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
Forward Transconductance
Drain-Source Leakage Current ( Tj =25oC)
Drain-Source Leakage Current ( Tj =70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
VDS=-10V, ID=-5.3A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 20V
ID=-5A
VDS=-24V
VGS=-4.5V
VDS=-15V
- 8 -S
- - -1 uA
- - -25 uA
- - ±100 nA
- 9 15 nC
- 2 - nC
- 5 - nC
- 10 - ns
tr Rise Time
td(off)
Turn-off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-25V
- 7 - ns
- 27 - ns
- 16 - ns
- 460 730 pF
- 180 - pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
- 130 - pF
Source-Drain Diode
Symbol
VSD
trr
Qrr
Parameter
Forward On Voltage2
Reverse Recovery Time2
Reverse Recovery Charge
Test Conditions
IS=-1.7A, VGS=0V
IS=-5A, VGS=0V,
dI/dt=100A/µs
Min. Typ. Max. Units
- - -1.2 V
- 21 - ns
- 18 - nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Mounted on 1 in2 copper pad of FR4 board ; 90/W when mounted on Min. copper pad.







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