AP4501M P-CHANNEL ENHANCEMENT Datasheet

AP4501M Datasheet, PDF, Equivalent


Part Number

AP4501M

Description

N AND P-CHANNEL ENHANCEMENT

Manufacture

Advanced Power Electronics

Total Page 11 Pages
Datasheet
Download AP4501M Datasheet


AP4501M
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Advanced Power
Electronics Corp.
AP4501M
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
7 -5.3
5.8 -4.7
20 -20
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201225022

AP4501M
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AP4501M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.02 - V/
- - 28 mΩ
- - 42 mΩ
1 - 3V
- 13 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8.4 - nC
- 2.1 - nC
- 4.7 - nC
- 6 - ns
- 5.2 - ns
- 18.8 - ns
- 4.4 -
- 645 -
- 150 -
- 95 -
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=7A, VGS=0V
Min. Typ. Max. Units
- - 1.67 A
- - 1.2 V


Features www.DataSheet4U.com AP4501M Advanced P ower Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching D1 G2 S2 D2 D1 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFE T N-CH BVDSS RDS(ON) ID P-CH BVDSS RDS (ON) ID 30V 28mΩ 7A -30V 50mΩ -5.3A SO-8 S1 G1 Description The Advanced Power MOSFETs from APEC provide the de signer with the best combination of fas t switching, ruggedized device design, low on-resistance and costeffectiveness . The SO-8 package is universally prefe rred for all commercialindustrial surfa ce mount applications and suited for lo w voltage applications such as DC/DC co nverters. G1 D1 D2 G2 S1 S2 Absolut e Maximum Ratings Symbol VDS VGS ID@TA= 25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate- Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 30 ±20 7 5.8 20 2 0.016 -55 to 150 -55 to 150 P-channel -30 ±20 -5.3 -4.7 -20 Units V V A A A W W/ ℃ ℃ ℃ Total Power Diss.
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