P-CHANNEL ENHANCEMENT. AP4501M Datasheet

AP4501M ENHANCEMENT. Datasheet pdf. Equivalent

AP4501M Datasheet
Recommendation AP4501M Datasheet
Part AP4501M
Description N AND P-CHANNEL ENHANCEMENT
Feature AP4501M; www.DataSheet4U.com AP4501M Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Low On-r.
Manufacture Advanced Power Electronics
Datasheet
Download AP4501M Datasheet




Advanced Power Electronics AP4501M
www.DataSheet4U.com
Advanced Power
Electronics Corp.
AP4501M
N AND P-CHANNEL ENHANCEMENT
MODE POWER MOSFET
Simple Drive Requirement
Low On-resistance
Fast Switching
Description
D2
D2
D1
D1
SO-8
G2
S2
G1
S1
The Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-
effectiveness.
The SO-8 package is universally preferred for all commercial-
industrial surface mount applications and suited for low voltage
applications such as DC/DC converters.
N-CH
P-CH
BVDSS
RDS(ON)
ID
BVDSS
RDS(ON)
ID
30V
28mΩ
7A
-30V
50mΩ
-5.3A
D1
G1 G2
S1
D2
S2
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID@TA=25
ID@TA=70
IDM
PD@TA=25
TSTG
TJ
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current3
Continuous Drain Current3
Pulsed Drain Current1
Total Power Dissipation
Linear Derating Factor
Storage Temperature Range
Operating Junction Temperature Range
Thermal Data
Symbol
Rthj-amb
Parameter
Thermal Resistance Junction-ambient3
Rating
N-channel P-channel
30 -30
±20 ±20
7 -5.3
5.8 -4.7
20 -20
2
0.016
-55 to 150
-55 to 150
Max.
Value
62.5
Units
V
V
A
A
A
W
W/
Unit
/W
Data and specifications subject to change without notice
201225022



Advanced Power Electronics AP4501M
www.DataSheet4U.com
AP4501M
N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=1mA
Static Drain-Source On-Resistance2 VGS=10V, ID=7A
VGS=4.5V, ID=5A
Gate Threshold Voltage
VDS=VGS, ID=250uA
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
VDS=10V, ID=7A
VDS=30V, VGS=0V
VDS=24V, VGS=0V
VGS=±20V
ID=7A
VDS=24V
VGS=4.5V
VDS=15V
ID=1A
RG=3.3Ω,VGS=10V
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
RD=15Ω
VGS=0V
VDS=25V
f=1.0MHz
30 - - V
- 0.02 - V/
- - 28 mΩ
- - 42 mΩ
1 - 3V
- 13 - S
- - 1 uA
- - 25 uA
- - ±100 nA
- 8.4 - nC
- 2.1 - nC
- 4.7 - nC
- 6 - ns
- 5.2 - ns
- 18.8 - ns
- 4.4 -
- 645 -
- 150 -
- 95 -
ns
pF
pF
pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=1.2V
Tj=25, IS=7A, VGS=0V
Min. Typ. Max. Units
- - 1.67 A
- - 1.2 V



Advanced Power Electronics AP4501M
www.DataSheet4U.com
AP4501M
P-CH Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
BVDSS
ΔBVDSS/ΔTj
RDS(ON)
Drain-Source Breakdown Voltage VGS=0V, ID=-250uA
Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA
Static Drain-Source On-Resistance2 VGS=-10V, ID=-5.3A
VGS=-4.5V, ID=-4.2A
-30 - - V
- -0.028 - V/
- - 50 mΩ
- - 90 mΩ
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1 - -3 V
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Forward Transconductance
Drain-Source Leakage Current (Tj=25oC)
Drain-Source Leakage Current (Tj=70oC)
Gate-Source Leakage
Total Gate Charge2
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time2
Rise Time
Turn-off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDS=-10V, ID=-5.3A
VDS=-30V, VGS=0V
VDS=-24V, VGS=0V
VGS= ± 20V
ID=-5.3A
VDS=-15V
VGS=-10V
VDS=-15V
ID=-1A
RG=6Ω,VGS=-10V
RD=15Ω
VGS=0V
VDS=-15V
f=1.0MHz
- 8.5 - S
- - -1 uA
- - -25 uA
- - ±100 nA
- 20 - nC
- 3.5 - nC
- 2 - nC
- 12 - ns
- 20 - ns
- 45 - ns
- 27 - ns
- 790 - pF
- 440 - pF
- 120 - pF
Source-Drain Diode
Symbol
Parameter
IS Continuous Source Current ( Body Diode )
VSD Forward On Voltage2
Test Conditions
VD=VG=0V , VS=-1.2V
Tj=25, IS=-2.6A, VGS=0V
Min. Typ. Max. Units
- - -1.67 A
- - -1.2 V
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse width <300us , duty cycle <2%.
3.Surface mounted on 1 in2 copper pad of FR4 board ; 135/W when mounted on Min. copper pad.







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