AP4515GM

www.DataSheet4U.com AP4515GM Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Lower Gate Charge ▼ Fast Switching Performance ▼ RoHS Compliant SO-8 SO-8 D2 D1 D2 D1 D1 D1 D2 D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID G2 G2 S2 G1S2 G1 S1 S1 35V 22mΩ 7.7A -35V 40mΩ -5.7A D2 P-CH BVDSS RDS(ON) ID D1 Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and costeffectiveness. G1 G2 S1 S2 The SO-8 package is universally preferred for all commercialindustrial surface mount applications and suited for low voltage applications such as DC/DC converters. Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 3 3 Rating N-channel 35 ±20 7.7 6.2 30 2.0 0.016 -55 to 150 -55 to 150 P-channel -35 ±12 -5.7 -4.6 -30 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 62.5 Unit ℃/W Data and specifications subject to change without notice 200408051-1/7 www.DataSheet4U.com AP4515GM N-CH Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-So...