AP4525GEH

www.DataSheet4U.com AP4525GEH Pb Free Plating Product Advanced Power Electronics Corp. ▼ Simple Drive Requirement ▼ Good Thermal Performance ▼ Fast Switching Performance S1 D1/D2 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET N-CH BVDSS RDS(ON) ID 40V 28mΩ 15A -40V 42mΩ -12A ▼ RoHS Compliant G1 S2 G2 P-CH BVDSS TO-252-4L RDS(ON) ID Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. D1 G1 G2 D2 S1 S2 Absolute Maximum Ratings Symbol VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1 Rating N-channel 40 ±16 15.0 12.0 50 10.4 0.083 -55 to 150 -55 to 150 P-channel -40 ±16 -12.0 -10.0 -50 Units V V A A A W W/ ℃ ℃ ℃ Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-c Rthj-a Parameter Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max. Max. Value 12 110 Unit ℃/W ℃/W Data and specifications subject to change without notice 200725064-1/7 www.DataSheet4U.com AP4525GEH N-CH Electrical Characteristics@ Tj=25 C(unless otherwise specified) Symbol BVDSS ΔBVDSS/ΔTj o Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance 2 Test Conditions VGS=0V, ID=250uA Min. 40 1 - Typ. 0.03 6 9 1.5 4 7 2...