www.DataSheet4U.com
2SK3264-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No sec...
www.DataSheet4U.com
2SK3264-01MR
N-CHANNEL SILICON POWER MOS-FET
Features
High speed switching Low on-resistance No secondary breakdown Low driving power High voltage VGS=±30V Guarantee Avalanche-proof
FUJI POWER MOS-FET
TO-220F15
2.54
Applications
Switching
regulators UPS DC-DC converters General purpose power amplifier
3. Source
Equivalent circuit schematic
Drain(D)
Maximum ratings and characteristicAbsolute maximum ratings
(Tc=25°C unless otherwise specified)
Item Drain-source voltage Continuous drain current Pulsed drain current Gate-source voltage Maximum Avalanche Energy Max. power dissipation Operating and storage temperature range Symbol V DS ID ID(puls] VGS EAV *1 PD Tch Tstg Rating 800 ±7 ±28 ±35 378.3 60 +150 -55 to +150 Unit V A A V mJ W °C °C
Gate(G) Source(S)
*1 L=14.2mH, Vcc=80V
Electrical characteristics (Tc =25°C unless otherwise specified)
Item Drain-source breakdown voltaget Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance Forward transcondutance Input capacitance Output capacitance Reverse transfer capacitance Turn-on time ton Turn-off time toff Avalanche capability Diode forward on-voltage Reverse recovery time Reverse recovery charge Symbol V(BR)DSS VGS(th) IDSS IGSS RDS(on) gfs Ciss Coss Crss td(on) tr td(off) tf IAV V SD trr Qrr Test Conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=800V VGS=0V VGS=±35V VDS=0V ID=3.5A VGS=10V ID=3.5A VDS=25V VDS =25V VGS=0V f=1MHz VCC=600V ID=7A VGS=...
