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TECHNICAL DATA
NPN POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/464 Devices 2N5685 2N5686 Q...
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TECHNICAL DATA
NPN POWER SILICON
TRANSISTOR
Qualified per MIL-PRF-19500/464 Devices 2N5685 2N5686 Qualified Level JAN JANTX JANTXV
MAXIMUM RATINGS Ratings
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Base Current Collector Current Total Power Dissipation
Symbol
VCEO VCBO VEBO IB IC PT TJ, Tstg
2N5685 2N5686 Units
60 60 80 80 Vdc Vdc Vdc Adc Adc W W 0 C Unit C/W
@ TC = +250C (1) @ TC = +1000C (1) Operating & Storage Junction Temperature Range
5.0 15 50 300 171 -55 to +200 Max. .0584
THERMAL CHARACTERISTICS
Characteristics Thermal Resistance, Junction-to-Case Symbol RθJC
0
TO-3* (TO-204AA)
1) Derate linearly 1.715 W/0C between TC = 250C and TC = 2000C
*See appendix A for package outline
ELECTRICAL CHARACTERISTICS (TC = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage IC = 100 mAdc Collector-Emitter Cutoff Current VCE = 30 Vdc VCE = 40 Vdc Collector-Emitter Cutoff Current VCE = 60 Vdc, VBE = 1.5 Vdc VCE = 80 Vdc, VBE = 1.5 Vdc Collector-Base Cutoff Current VCB = 60 Vdc VCB = 80 Vdc 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 2N5685 2N5686 V(BR)CEO 60 80 500 500 500 500 2.0 2.0 Vdc
ICEO
µAdc
ICEX
µAdc
ICBO
mAdc
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2N5685, 2N5686 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Emitter-Base Cutoff Current VEB ...