OP775D

www.DataSheet4U.com Prod uct Bul le tin OP775A Feb ru ary 2000 NPN Phototransistor with Collector-Emitter Capacitor Types OP775A, OP775B, OP775C, OP775D Features Supresses high frequency noise Variety of sensitivity ranges Wide receiving angle Side looking package for space limited applications Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) Collector- Emitter Volt age. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 V Emitter- Collector Volt age . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0 V Stor age and Tem pera ture Range . . . . . . . . . . . . . . . . . . . . . . . . . . . -40° C to +100° C Lead Sol der ing Tem pera ture [1/16 inch (1.6 mm) from case for 5 sec. with sol der ing iron]. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260 ° C(1) Power Dis si pa tion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mW(2) NOTES: (1) RMA flux is rec om mended. Du ra tion can be ex tended to 10 sec. max. when flow sol der ing. Max. 20 grams force may be applied to leads when soldering. (2) Derate linearly 1.33 mW/° C above 25° C. (3) Light source is an unfiltered GaAs LED with a peak emission wavelength of 935 nm and a radiometric intensity level which varies less than 10% over the entire lens surface of the phototransistor being tested. (4) To calculate ty...