V50100P

www.DataSheet4U.com V50100P New Product Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier Ultra Low VF = 0.372 V at IF = 5 A TO-247AD (TO-3P) Major Ratings and Characteristics IF(AV) VRRM IFSM VF at IF = 20 A TJ max. 2 x 25 A 100 V 250 A 0.64 V 150 °C PIN 1 PIN 3 PIN 2 CASE 3 2 1 Features Trench MOS Schottky Technology Low forward voltage drop, low power losses High efficiency operation Low thermal resistance Solder Dip 260 °C, 40 seconds Mechanical Data Case: TO-247AD (TO-3P) Epoxy meets UL 94V-0 flammability rating Terminals: Matte tin plated leads, solderable per J-STD-002B and JESD22-B102D E3 suffix for commercial grade Polarity: As marked Mounting Torque: 10 in-lbs Maximum Typical Applications For use in high frequency inverters, switching power supplies, freewheeling diodes, Oring diode, dc-to-dc converters and reverse battery protection. Maximum Ratings (TA = 25 °C unless otherwise specified) Parameter Maximum repetitive peak reverse voltage RMS reverse voltage for sine wave DC blocking voltage Maximum average forward rectified current (see Fig. 1) Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load Peak repetitive reverse current per leg at tp = 2 µs, 1 kHz Operating junction and storage temperature range per device per leg per leg IFSM IRRM TJ, TSTG 250 1.0 - 20 to + 150 A A °C Symbol VRRM VRMS VR IF(AV) V50100P 100 70 100 50 25 Unit V V V A Document Number 88929 01-Dec-05 www.vish...