BSF053N03LTG

www.DataSheet4U.com BSF053N03LT G OptiMOS®2 Power-MOSFET Features Pb-free plating; RoHS compliant Dual sided cooling Low profile (<0.7 mm) Avalanche rated Qualified for consumer level application Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) Optimized for high switching frequency DC/DC converter Low parasitic inductance Product Summary V DS R DS(on),max ID 30 5.3 71 V mΩ A CanPAK Compatible with DirectFET® package ST footprint and outline 1) Type BSF053N03LT G Package CanPAK Outline ST Marking 3003 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID V GS=10 V, T C=25 °C V GS=10 V, T C=100 °C V GS=10 V, T A=25 °C, R thJA=58 K/W 2) Pulsed drain current3) Avalanche current, single pulse 4) Avalanche energy, single pulse Gate source voltage 1) Value 71 45 16 284 50 75 ±20 Unit A I D,pulse I AS E AS V GS T C=25 °C T C=25 °C I D=44 A, R GS=25 Ω mJ V DirectFET® is a trademark of International Rectfier Corporation BSF053N03LT G uses DirectFET® technology licensed from International Rectifier Corporation Rev. 1.0 page 1 2008-01-18 www.DataSheet4U.com BSF053N03LT G Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Power dissipation Symbol Conditions P tot T C=25 °C T A=25 °C, R thJA=58 K/W 2) Operating and storage temperature IEC climatic category; DIN IEC 68-1 T j, T stg Value 42 2.2 -40 ... 150 55/150/56 °C Unit W Parameter Symbol...