Signal Transistor. BSR92P Datasheet

BSR92P Transistor. Datasheet pdf. Equivalent

BSR92P Datasheet
Recommendation BSR92P Datasheet
Part BSR92P
Description Small Signal Transistor
Feature BSR92P; www.DataSheet4U.com BSR92P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode.
Manufacture Infineon Technologies
Datasheet
Download BSR92P Datasheet




Infineon Technologies BSR92P
www.DataSheet4U.com
SIPMOS® Small-Signal-Transistor
Features
• P-Channel
• Enhancement mode / Logic level
• Avalanche rated
• Pb-free lead plating; RoHS compliant
• Footprint compatible to SOT23
Product Summary
V DS
R DS(on),max
ID
BSR92P
-250 V
11
-0.14 A
PG-SC59
Type
BSR92P
Package
PG-SC59
Tape and Reel Information
L6327 = 3000 pcs. / reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Marking
LD
Lead free
Yes
Packing
Non dry
Parameter
Continuous drain current
Pulsed drain current
Symbol Conditions
ID
I D,pulse
T A=25 °C
T A=70 °C
T A=25 °C
Value
steady state
-0.14
-0.11
-0.56
Unit
A
Avalanche energy, single pulse
E AS I D=-0.14 A, R GS=25
24 mJ
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
V GS
P tot T C=25 °C
T j, T stg
JESD22-C101 (HBM)
Soldering temperature
IEC climatic category; DIN IEC 68-1
±20
0.5
-55 ... 150
1A (250V to 500V)
260 °C
55/150/56
V
W
°C
Rev 1.0
page 1
2007-04-10



Infineon Technologies BSR92P
www.DataSheet4U.com
Parameter
Thermal characteristics
Thermal resistance,
junction - ambient
Symbol Conditions
BSR92P
min.
Values
typ.
Unit
max.
R thJA
minimal footprint,
steady state
- - 250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
V (BR)DSS V GS=0 V, I D=-250 µA
V GS(th)
V DS=V GS,
I D=-130 µA
-250
-2
-
-1.5
-V
-1
I DSS
V DS=-250 V, V GS=0 V,
T j=25 °C
-
-0.1 -1 µA
I GSS
V DS=-250 V, V GS=0 V,
T j=150 °C
V GS=-20 V, V DS=0 V
V GS=-2.8 V,
I D=-0.025 A
-
-
-
-10 -100
-10 -100 nA
11 20
R DS(on)
V GS=-4.5 V, I D=-
0.13 A
- 9 13
V GS=-10 V,
I D=-0.14 A
- 8 11
g fs
|V DS|>2|I D|R DS(on)max,
I D=-0.11 A
0.1
0.3
-S
Rev 1.0
page 2
2007-04-10



Infineon Technologies BSR92P
www.DataSheet4U.com
Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics2)
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
BSR92P
min.
Values
typ.
Unit
max.
C iss
C oss
C rss
t d(on)
tr
t d(off)
tf
V GS=0 V, V DS=-25 V,
f =1 MHz
V DD=-125 V,
V GS=-10 V,
I D=-0.14 A, R G=6
-
-
-
-
-
-
-
82 109 pF
12 16
58
6.4 9.0 ns
6.3 9.0
75.0
112
71.0
163
Q gs
Q gd
Qg
V plateau
V DD=-200 V, I D=-
0.14 A, V GS=0 to -10 V
-
-
-
-
-0.2 -0.3 nC
-1.2 -1.8
-3.6 -4.8
-2.7 - V
IS
I S,pulse
T C=25 °C
- - -0.14 A
- - -0.56
V SD
V GS=0 V, I F=0.14 A,
T j=25 °C
-
-0.8 -1.2 V
t rr
V R=125 V, I F=|I S|,
Q rr di F/dt =100 A/µs
- 66 - ns
- 125 - nC
2) See figure 16 for gate charge parameter definition
Rev 1.0
page 3
2007-04-10







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