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BSR92P
SIPMOS® Small-Signal-Transistor
Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23
Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A
PG-SC59
Type BSR92P
Package PG-SC59
Tape and Reel Information L6327 = 3000 pcs. / reel
Marking LD
Lead free Yes
Packing Non dry
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101 (HBM) T C=25 °C T A=25 °C I D=-0.14 A, R GS=25 Ω -0.14 -0.11 -0.56 24 ±20 0.5 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C A Unit
Rev 1.0
page 1
2007-04-10
www.DataSheet4U.com
BSR92P
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state 250 K/W Values typ. max. Unit
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-130 µA V DS=-250 V, V GS=0 V, T j=25 °C V DS=-250 V, V GS=0 V, T j=150 °C Gate-source leakage current I GSS V GS=-20 V, V DS=0 V V GS=-2.8 V, I D=-0.025 A Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=0.13 A V GS=-10 V, I D=-0.14 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.11 A -250 -2 -1.5 -1 V
Zero gate voltage drain current
I DSS
-
-0.1
-1
µA
-
-10 -10 11
-100 -100 20 nA
-
9
13
Ω
-
8
11
0.1
0.3
-
S
Rev 1.0
page 2
2007-04-10
www.DataSheet4U.com
BSR92P
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=125 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=0.14 A, T j=25 °C -0.8 66 125 -0.14 -0.56 -1.2 V ns nC A Q gs Q gd Qg V plateau V DD=-200 V, I D=0.14 A, V GS=0 to -10 V -0.2 -1.2 -3.6 -2.7 -0.3 -1.8 -4.8 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-125 V, V GS=-10 V, I D=-0.14 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 82 12 5 6.4 6.3 75.0 71.0 109 16 8 9.0 9.0 112 163 ns pF Values typ. max. Unit
2)
See figure 16 for gate charge parameter definition
Rev 1.0
page 3
2007-04-10
www.DataSheet4U.com
BSR92P
1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V
0.6
0.15
0.5
0.4
0.1
P tot [W]
0.3
0.2
-I D [A]
0.05 0.