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BSR92P Dataheets PDF



Part Number BSR92P
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Small Signal Transistor
Datasheet BSR92P DatasheetBSR92P Datasheet (PDF)

www.DataSheet4U.com BSR92P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A PG-SC59 Type BSR92P Package PG-SC59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LD Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady sta.

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www.DataSheet4U.com BSR92P SIPMOS® Small-Signal-Transistor Features • P-Channel • Enhancement mode / Logic level • Avalanche rated • Pb-free lead plating; RoHS compliant • Footprint compatible to SOT23 Product Summary V DS R DS(on),max ID -250 11 -0.14 V Ω A PG-SC59 Type BSR92P Package PG-SC59 Tape and Reel Information L6327 = 3000 pcs. / reel Marking LD Lead free Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Value steady state Continuous drain current ID T A=25 °C T A=70 °C Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature ESD class Soldering temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V GS P tot T j, T stg JESD22-C101 (HBM) T C=25 °C T A=25 °C I D=-0.14 A, R GS=25 Ω -0.14 -0.11 -0.56 24 ±20 0.5 -55 ... 150 1A (250V to 500V) 260 °C 55/150/56 mJ V W °C A Unit Rev 1.0 page 1 2007-04-10 www.DataSheet4U.com BSR92P Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - ambient R thJA minimal footprint, steady state 250 K/W Values typ. max. Unit Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=-250 µA V GS(th) V DS=V GS, I D=-130 µA V DS=-250 V, V GS=0 V, T j=25 °C V DS=-250 V, V GS=0 V, T j=150 °C Gate-source leakage current I GSS V GS=-20 V, V DS=0 V V GS=-2.8 V, I D=-0.025 A Drain-source on-state resistance R DS(on) V GS=-4.5 V, I D=0.13 A V GS=-10 V, I D=-0.14 A Transconductance g fs |V DS|>2|I D|R DS(on)max, I D=-0.11 A -250 -2 -1.5 -1 V Zero gate voltage drain current I DSS - -0.1 -1 µA - -10 -10 11 -100 -100 20 nA - 9 13 Ω - 8 11 0.1 0.3 - S Rev 1.0 page 2 2007-04-10 www.DataSheet4U.com BSR92P Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics 2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continuous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse V SD t rr Q rr V R=125 V, I F=|I S|, di F/dt =100 A/µs T C=25 °C V GS=0 V, I F=0.14 A, T j=25 °C -0.8 66 125 -0.14 -0.56 -1.2 V ns nC A Q gs Q gd Qg V plateau V DD=-200 V, I D=0.14 A, V GS=0 to -10 V -0.2 -1.2 -3.6 -2.7 -0.3 -1.8 -4.8 V nC C iss C oss C rss t d(on) tr t d(off) tf V DD=-125 V, V GS=-10 V, I D=-0.14 A, R G=6 Ω V GS=0 V, V DS=-25 V, f =1 MHz 82 12 5 6.4 6.3 75.0 71.0 109 16 8 9.0 9.0 112 163 ns pF Values typ. max. Unit 2) See figure 16 for gate charge parameter definition Rev 1.0 page 3 2007-04-10 www.DataSheet4U.com BSR92P 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); |V GS|≥10 V 0.6 0.15 0.5 0.4 0.1 P tot [W] 0.3 0.2 -I D [A] 0.05 0.


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