PNP Transistor. 2SB601 Datasheet

2SB601 Transistor. Datasheet pdf. Equivalent

2SB601 Datasheet
Recommendation 2SB601 Datasheet
Part 2SB601
Description PNP Transistor
Feature 2SB601; www.DataSheet4U.com DATA SHEET SILICON POWER TRANSISTOR 2SB601 PNP SILICON EPITAXIAL TRANSISTOR (.
Manufacture NEC
Datasheet
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NEC 2SB601
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DATA SHEET
SILICON POWER TRANSISTOR
2SB601
PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
FEATURES
• High-DC current gain due to Darlington connection
• Low collector saturation voltage
• Low collector cutoff current
• Ideal for use in direct drive from IC output for magnet drivers such
as treminal equipment or cash registers
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
Parameter
Symbol
Collector to base voltage
VCBO
Collector to emitter voltage
VCEO
Emitter to base voltage
VEBO
Collector current
IC(DC)
Collector current
IC(pulse)*
Base current
IB(DC)
Total power dissipation
PT (Ta = 25°C)
Total power dissipation
PT (Tc = 25°C)
Junction temperature
Tj
Storage temperature
Tstg
* PW 10 ms, duty cycle 50%
Ratings
100
100
7.0
+–5.0
+–8.0
0.5
1.5
30
150
55 to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
PACKAGE DRAWING (UNIT: mm)
(/(&752'(
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The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D16131EJ3V0DS00
Date Published April 2002 N CP(K)
Printed in Japan
©
21090928



NEC 2SB601
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ELECTRICAL CHARACTERISTICS (Ta = 25°C)
Parameter
Symbol
Conditions
Collector to emitter voltage VCEO(SUS) IC = 3 A, IB1 = 3 mA, L = 1 mH
Collector to emitter voltage VCEX(SUS)1 IC = 3 A, IB1 = IB2 = 3 mA,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector to emitter voltage VCEX(SUS)2 IC = 6 A, IB1 = 12 mA, IB2 = 3 mA,
VBE(OFF) = 5.0 V, L = 180 µH, clamped
Collector cutoff current
ICBO VCB = 100 V, IE = 0
Collector cutoff current
ICER VCE = 100 V, RBE = 51 , Ta = 125°C
Collector cutoff current
ICEX1
VCE = 100 V, VBE(OFF) = 1.5 V
Collector cutoff current
ICEX2
VCE = 100 V, VBE(OFF) = 1.5 V,
Ta = 125°C
Emitter cutoff current
IEBO VEB = 5.0 V, IC = 0
DC current gain
hFE1* VCE = 2.0 V, IC = 3.0 A
DC current gain
hFE2* VCE = 2.0 V, IC = 5.0 A
Collector saturation voltage VCE(sat)* IC = 3.0 A, IB = 3.0 mA
Base saturation voltage
VBE(sat)* IC = 3.0 A, IB = 3.0 mA
Turn-on time
Storage time
Fall time
ton IC = 3.0 A, RL = 17 ,
tstg IB1 = IB2 = 3.0 mA, VCC ≅ −50 V
Refer to the test circuit.
tf
* Pulse test PW 350 µs, duty cycle 2%
h)( CLASSIFICATION
Marking
hFE1
M
2,000 to 5,000
L
3,000 to 7,000
K
5,000 to 15,000
TYPICAL CHARACTERISTICS (Ta = 25°C)
2SB601
MIN.
100
100
TYP.
MAX.
Unit
V
V
100
V
10 µA
1.0 mA
10 µA
1.0 mA
2,000
500
3.0
15,000
mA
1.5 V
2.0 V
0.5 µs
1.0 µs
1.0 µs
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2 Data Sheet D16131EJ3V0DS



NEC 2SB601
www.DataSheet4U.com
2SB601
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Data Sheet D16131EJ3V0DS
3







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