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POWER TRANSISTOR. D2499 Datasheet

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POWER TRANSISTOR. D2499 Datasheet






D2499 TRANSISTOR. Datasheet pdf. Equivalent




D2499 TRANSISTOR. Datasheet pdf. Equivalent





Part

D2499

Description

SILICON DIFFUSED POWER TRANSISTOR



Feature


www.DataSheet4U.com 2SD2499 GENERAL DES CRIPTION SILICON DIFFUSED POWER TRANSI STOR Highvoltage,high-speed switching npn transistors in a plastic envelope w ith integrated efficiency diode,primari ly for use in horizontal deflection cir cuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CON DITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat.
Manufacture

Wing Shing Computer

Datasheet
Download D2499 Datasheet


Wing Shing Computer D2499

D2499; VF tf PARAMETER Collector-emitter volt age peak value Collector-emitter voltag e (open base) Collector current (DC) Co llector current peak value Total power dissipation Collector-emitter saturatio n voltage Collector saturation current Diode forward voltage Fall time Tmb 25 IC = 4.0A; IB = 0.8A f = 16KHz IF = 4. 0A ICsat = 4.0A; f = 16KHz 1.5 MAX 15 00 600 5 10 50 5 2.


Wing Shing Computer D2499

.0 1.0 UNIT V V A A W V A V s LIMITING VALUES SYMBOL VCESM VCEO IC ICM IB IB M Ptot Tstg Tj PARAMETER Collector-emi tter voltage peak value Collector-emitt er voltage (open base) Collector curren t (DC) Collector current peak value Bas e current (DC) Base current peak value Total power dissipation Storage tempera ture Junction temperature CONDITIONS V BE = 0V Tmb 25 M.


Wing Shing Computer D2499

IN -55 - MAX 1500 600 5 10 2 50 150 150 UNIT V V A A A A W ELECTRICAL CHARAC TERISTICS SYMBOL ICE ICES VCEOsust VCE sat VBEsat hFE VF fT Cc ts tf PARAMETE R Collector cut-off current Collector- emitter sustaining voltage Collector-em itter saturation voltages Base-emitter satuation voltage DC current gain Diode forward voltage Transition frequency a t f = 5MHz Collect.

Part

D2499

Description

SILICON DIFFUSED POWER TRANSISTOR



Feature


www.DataSheet4U.com 2SD2499 GENERAL DES CRIPTION SILICON DIFFUSED POWER TRANSI STOR Highvoltage,high-speed switching npn transistors in a plastic envelope w ith integrated efficiency diode,primari ly for use in horizontal deflection cir cuites of colour television receivers QUICK REFERENCE DATA SYMBOL TO-3PM CON DITIONS VBE = 0V MIN VCESM VCEO IC ICM Ptot VCEsat Icsat.
Manufacture

Wing Shing Computer

Datasheet
Download D2499 Datasheet




 D2499
www.DataSheet4U.com
2SD2499
SILICON DIFFUSED POWER TRANSISTOR
GENERAL DESCRIPTION
Highvoltage,high-speed switching npn transistors in a
plastic envelope with integrated efficiency diode,prim-
arily for use in horizontal deflection circuites of colour
television receivers
QUICK REFERENCE DATA
SYMBOL
VCESM
VCEO
IC
ICM
Ptot
VCEsat
Icsat
VF
tf
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
VBE = 0V
TO-3PM
Tmb 25
IC = 4.0A; IB = 0.8A
f = 16KHz
IF = 4.0A
ICsat = 4.0A; f = 16KHz
MIN MAX UNIT
- 1500 V
- 600 V
- 5A
- 10 A
- 50 W
- 5V
-A
1.5 2.0
V
1.0 s
LIMITING VALUES
SYMBOL
VCESM
VCEO
IC
ICM
IB
IBM
Ptot
Tstg
Tj
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
CONDITIONS
VBE = 0V
Tmb 25
MIN MAX UNIT
-
1500
V
- 600 V
- 5A
- 10 A
- 2A
-A
- 50 W
-55 150
- 150
ELECTRICAL CHARACTERISTICS
SYMBOL
ICE
ICES
VCEOsust
VCEsat
VBEsat
hFE
VF
fT
Cc
ts
tf
PARAMETER
Collector cut-off current
Collector-emitter sustaining voltage
Collector-emitter saturation voltages
Base-emitter satuation voltage
DC current gain
Diode forward voltage
Transition frequency at f = 5MHz
Collector capacitance at f = 1MHz
Switching times(16KHz line deflecton circuit)
Turn-off storage time Turn-off fall time
CONDITIONS
VBE = 0V; VCE = VCESMmax
VBE = 0V; VCE = VCESMmax
Tj = 125
IB = 0A; IC = 100mA
L = 25mH
IC = 4.0A; IB = 0.8A
IC = 4.0A; IB = 0.8A
IC = 1A; VCE = 5V
IF = 4.0A
IC = 0.1A; VCE = 10V
VCB = 10V
IC=4A,IB(end)=0.8A,VCC=100V
IC=4A,IB(end)=0.8A,VCC=100V
Wing Shing Computer Components Co., (H.K.)Ltd.
Homepage: http://www.wingshing.com
Tel:(852)2341 9276 Fax:(852)2797 8153
E-mail: wsccltd@hkstar.com
MIN MAX UNIT
- 1.0 mA
- 2.5 mA
-V
- 5V
- 1.5 V
8 40
1.5 2.0
V
1 - MHz
230 pF
-s
0.35 1.0
s











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