Product Description
Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar Transistor M...
Product Description
Sirenza Microdevices’ SBA-5089 is a high performance InGaP/ GaAs Heterojunction Bipolar
Transistor MMIC Amplifier. A Darlington configuration designed with InGaP process technology provides broadband performance up to 5 GHz with excellent thermal perfomance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only a single positive supply voltage, DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.
Gain & Return Loss
30 20 10 0 -10 -20 -30 -40 0 1 2 3 Frequency (GHz) 4 5 6
S11 S22 S21
SBA-5089
DC-5 GHz, Cascadable InGaP/GaAs HBT MMIC Amplifier
Product Features
IP3 = 34.0dBm @ 1950MHz Pout=13.0 dBm @-45dBc ACP IS-95 1950MHz Robust 1000V ESD, Class 1C Operates From Single Supply Patented Thermal Design
Applications
PA Driver Amplifier Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Terminals
U nits dB dB m dB m dB m MHz dB dB dB V mA °C /W 1950 MHz 1950 MHz 1950 MHz 4.5 72 14.0 9.0 Frequency 850 MHz 1950 MHz 850 MHz 1950 MHz 850 MHz 1950 MHz 1950 MHz Min. 18.5 16.5 18.0 32.0 Typ. 20.0 18.0 19.7 19.5 36.0 34.0 13.0 4400 20.0 11.0 4.5 4.9 80 70 5.5 5.3 88 Max. 21.5 19.5
Symbol G P 1dB OIP3 POUT
Parameter Small Si gnal Gai n Output Power at 1dB C ompressi on Output Thi rd Order Intercept Poi nt Output Power @ -45dBc AC P IS-95 9 Forw...