Silicon Diode. YG811S04R Datasheet

YG811S04R Datasheet PDF, Equivalent


Part Number

YG811S04R

Description

Silicon Diode

Manufacture

Fuji Electric

Total Page 3 Pages
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YG811S04R Datasheet
YG811S04Rwww.DataSheet4U.com
SCHOTTKY BARRIER DIODE
(40V / 5A TO-22OF15)
Outline Drawings
10.5±0.5
ø3.2
+0.2
-0.1
4.5±0.2
2.7±0.2
Features
Low VF
Super high speed switching.
High reliability by planer design.
Applications
High speed power switching.
Maximum Ratings and Characteristics
Absolute Maximum Ratings
1.2±0.2
0.7±0.2
5.08±0.4
JEDEC
EIAJ
0.6±0.2
2.7±0.2
SC-67
Connection Diagram
13
Item
Symbol
Conditions
Rating
Repetitive peak reverse voltage
VRRM
40
Repetitive peak surge reverse voltage
Isolating voltage
Average output current
Surge current
VRSM
Viso
IO
IFSM
tw=500ns, duty=1/40
Terminals to Case,
AC. 1min.
duty=1/2, Tc=122°C
Square wave
Sine wave 10ms
48
1500
5
120
Operating junction temperature
Tj
-40 to +150
Storage temperature
Tstg
-40 to +150
Electrical Characteristics (Ta=25°C Unless otherwise specified )
Item
Symbol
Conditions
Forward voltage drop
VF IF=5.0A
Reverse current
IR VR=VRRM
Thermal resistance
Rth(j-c)
Junction to case
Mechanical Characteristics
Max.
0.55
5.0
5.0
Mounting torque
Weight
Recommended torque
0.3 to 0.5
2.3
Unit
V
V
V
A
A
°C
°C
Unit
V
mA
°C/W
N·m
g

YG811S04R Datasheet
www.DataSheet4U.com
(40V / 5A TO-22OF15)
Characteristics
Forward Characteristic (typ.)
100
10
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
1
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4
VF Forward Voltage (V)
YG811S04R
Reverse Characteristic (typ.)
10 2
10 1
10 0
10 -1
10 -2
10 -3
0
10 20 30
VR Reverse Voltage (V)
Tj=150°C
Tj=125°C
Tj=100°C
Tj=25°C
40 50
7.0
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Forward Power Dissipation
Io
λ
360°
Square wave
Square wave
Sine wave
Square wave
λ =60°
λ =120°
λ =180°
λ =180°
DC
0.5 1.0 1.5 2.0 2.5 3.0 3.5
Io Average Forward Current (A)
Per 1element
4.0 4.5 5.0
5.5
Reverse Power Dissipation
12
360°
VR
10
α
8
DC
6
α =180°
4
2
0
0 5 10 15 20 25 30 35 40 45 50
VR Reverse Voltage (V)
Current Derating (Io-Tc)
160
150
140
130
120
110
100
90
360°
λ
Io
VR=30V
DC
Sine wave
λ =180°
Square wave
λ =180°
Square wave
λ =120°
Square wave
λ =60°
80
012345678
Io Average Output Current (A)
λ :Conduction angle of forward current for each rectifier element
Io:Output current of center-tap full wave connection
Junction Capacitance Characteristic (typ.)
1000
100
1
10
VR Reverse Voltage (V)
100


Features Datasheet pdf www.DataSheet4U.com YG811S04R SCHOTTKY BARRIER DIODE (40V / 5A TO-22OF15) Out line Drawings 10.5±0.5 ø3.2 +0.2 -0.1 4.5±0.2 2.7±0.2 6.3 2.7±0.2 3.7± 0.2 1.2±0.2 13Min 0.7±0.2 Features Low VF Super high speed switching. High reliability by planer design. 15±0.3 0.6±0.2 2.7±0.2 5.08±0.4 Applica tions High speed power switching. JEDE C EIAJ SC-67 Connection Diagram 1 3 Maximum Ratings and Characteristics Abs olute Maximum Ratings Item Repetitive p eak reverse voltage Repetitive peak sur ge reverse voltage Isolating voltage Av erage output current Surge current Oper ating junction temperature Storage temp erature Symbol VRRM VRSM Viso IO IFSM T j Tstg Conditions Rating 40 Unit V V V A A °C °C tw=500ns, duty=1/40 Term inals to Case, AC. 1min. duty=1/2, Tc=1 22°C Square wave Sine wave 10ms 48 15 00 5 120 -40 to +150 -40 to +150 Elect rical Characteristics (Ta=25°C Unless otherwise specified ) Item Forward volt age drop Reverse current Thermal resistance Symbol VF IR Rth(j-c) Conditions IF.
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