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Electronics
LIMITED
PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS
2N5679
2N5680
PNP
TO-39
2N5681
2N5682
NPN
TO-39
These Are High Voltage & High Current, General Purpose Transistors
ABSOLUTE MAXIMUM RATINGS.
DESCRIPTION
SYMBOL
2N5679
2N5680
2N5681
2N5682
Collector -Emitter Voltage
VCEO
100
120
Collector -Base Voltage
VCBO
100
120
Emitter -Base Voltage
VEBO
4.0
Collector Current Continuous
IC
1.0
Base Current
IB 0.5
Power Dissipation @Ta=25 degC
PD
1.0
Derate Above 25deg C
5.7
Power Dissipation @Tc=25 degC
PD
10
Derate Above 25deg C
57
Operating And Storage Junction
Tj, Tstg
-65 to +200
Temperature Range
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
17.5
Junction to Ambient
Rth(j-a)
175
ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION 2N5679 2N5680
2N5681 2N5682
Collector -Emitter Voltage
VCEO(sus) IC=10mA,IB=0
>100
>120
Collector-Cut off Current
ICBO VCB=100V, IE=0
<1.0
-
VCB=120V, IE=0
- <1.0
ICEO VCE=70V, IB=0
<10 -
VCE=80V, IB=0
- <10
ICEX VCE=100V,VEB=1.5V <1.0
-
VCE=120V,VEB=1.5V
-
<1.0
Emitter-Cut off Current
IEBO
TC=150 deg C
VCE=100V,VEB=1.5V
VCE=120V,VEB=1.5V
VEB=4V, IC=0
<1.0
-
<1.0
-
<1.0
<1.0
UNITS
V
V
V
A
A
W
mW/deg C
W
mW/deg C
deg C
deg C/W
deg C/W
UNITS
V
uA
uA
uA
uA
uA
uA
mA
mA
uA
