2N5681

www.DataSheet4U.com Transys Electronics L I M I T E D PNP/NPN HIGH VOLTAGE SILICON TRANSISTORS 2N5679 2N5680 PNP TO-39 2N5681 2N5682 NPN TO-39 These Are High Voltage & High Current, General Purpose Transistors ABSOLUTE MAXIMUM RATINGS. DESCRIPTION SYMBOL 2N5679 2N5681 100 100 2N5680 2N5682 120 120 UNITS V V V A A W mW/deg C W mW/deg C deg C VCEO Collector -Emitter Voltage VCBO Collector -Base Voltage VEBO 4.0 Emitter -Base Voltage IC 1.0 Collector Current Continuous IB 0.5 Base Current PD 1.0 Power Dissipation @Ta=25 degC 5.7 Derate Above 25deg C PD 10 Power Dissipation @Tc=25 degC 57 Derate Above 25deg C Tj, Tstg -65 to +200 Operating And Storage Junction Temperature Range THERMAL RESISTANCE Rth(j-c) 17.5 Junction to Case Rth(j-a) 175 Junction to Ambient ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5681 VCEO(sus) IC=10mA,IB=0 >100 Collector -Emitter Voltage ICBO VCB=100V, IE=0 <1.0 Collector-Cut off Current VCB=120V, IE=0 ICEO VCE=70V, IB=0 <10 VCE=80V, IB=0 ICEX VCE=100V,VEB=1.5V <1.0 VCE=120V,VEB=1.5V TC=150 deg C VCE=100V,VEB=1.5V VCE=120V,VEB=1.5V VEB=4V, IC=0 deg C/W deg C/W 2N5680 2N5682 >120 <1.0 <10 <1.0 UNITS V uA uA uA uA uA uA Emitter-Cut off Current IEBO <1.0 <1.0 <1.0 <1.0 mA mA uA www.DataSheet4U.com ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified) 2N5679-82 DESCRIPTION SYMBOL TEST CONDITION 2N5679 2N5680 2N5681 2N5682 hFE* IC=1A,VCE=2V >5.0 DC Current Gain IC=250...