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IPP051NE8NG Dataheets PDF



Part Number IPP051NE8NG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP051NE8NG DatasheetIPP051NE8NG Datasheet (PDF)

www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.1 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB051NE8N G IPI05CNE8N G IPP.

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www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G OptiMOS®2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO 263) ID 85 5.1 100 V mΩ A • Ideal for high-frequency switching and synchronous rectification Type IPB051NE8N G IPI05CNE8N G IPP054NE8N G Package Marking PG-TO263-3 051NE8N PG-TO262-3 05CNE8N PG-TO220-3 054NE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage 4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Value 100 100 400 826 6 ±20 300 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.04 page 1 2006-02-17 www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.5 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=250 µA V DS=68 V, V GS=0 V, T j=25 °C V DS=68 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=100 A, TO220, TO262 V GS=10 V, I D=100 A, TO263 Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=100 A 85 2 3 0.1 4 1 µA V - 10 1 4.1 100 100 5.4 nA mΩ 81 3.8 1.8 162 5.1 Ω S 1) 2) J-STD20 and JESD22 Current is limited by bondwire; with an R thJC=0.5 K/W the chip is able to carry 161 A. See figure 3 Tjmax=150 °C and duty cycle D=0.01 for V gs<-5V 3) 4) 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.04 page 2 2006-02-17 www.DataSheet4U.com IPB051NE8N G IPI05CNE8N G IPP054NE8N G Parameter Symbol Conditions min. Values typ. max. Unit Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics6) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 6) C iss C oss C.


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