OptiMOS® Power-Transistor
Features • For fast switching converters and sync. rectification • N-channel enhancement - nor...
OptiMOS® Power-
Transistor
Features For fast switching converters and sync. rectification N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
IPP050N06N G IPB050N06N G
Product Summary V DS R DS(on),max SMDversion ID
60 V 4.7 m: 100 A
Type
IPP050N06N
IPB050N06N
Package Marking
PG-TO220-3 050N06N
PG-TO263-3 050N06N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current Pulsed drain current
ID I D,pulse
T C=25 °C1) T C=100 °C T C=25 °C2)
Avalanche energy, single pulse
E AS
I D=100 A, R GS=25 :
Reverse diode dv /dt
dv /dt
I D=100 A, V DS=48 V, di /dt =200 A/μs, T j,max=175 °C
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1) Current is limited by bondwire; with an RthJC=0.5 the chip is able to carry 160A 2) See figure 3
Rev. 1.14
page 1
Value 100 100 400 810
6
±20 300 -55 ... 175 55/175/56
Unit A
mJ kV/μs V W °C
2007-08-29
IPP050N06N G IPB050N06N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
SMD version, device on PCB
R thJA minimal footprint
-
6 cm2 cooling area3)
-
-
0.5 K/W
-
62
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0...
