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IPB065N06L G
IPP065N06L G
OptiMOS® Power-Transistor
Features • For fast switching converters and ...
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IPB065N06L G
IPP065N06L G
OptiMOS® Power-
Transistor
Features For fast switching converters and sync. rectification N-channel enhancement - logic level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID 60 6.5 80 V mΩ A
Type
IPB065N06L G
IPP065N06L G
Type IPB063N06L G Package IPP063N06L G Marking
Package PG-TO263-3-2 P-TO263-3-2 065N06L PP-TO220-3-1
Marking PG-TO220-3-1 063N06L 065N06L 063N06L
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1) 2)
Value 80 80 320 530 6 ±20
Unit A
I D,pulse E AS dv /dt V GS P tot T j, T stg
T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C
mJ kV/µs V W °C
T C=25 °C
250 -55 ... 175 55/175/56
Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 125 A. See figure 3
Rev. 1.1
page 1
2006-05-05
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IPB065N06L G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source brea...