IPB06CNE8NG

www.DataSheet4U.com IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO263) ID 85 6.2 100 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Package Marking PG-TO263-3 06CNE8N PG-TO262-3 06CNE8N PG-TO220-3 06CNE8N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current3) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C I D=100 A, R GS=25 Ω I D=100 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C Value 100 88 400 480 6 ±20 214 -55 ... 175 55/175/56 mJ kV/µs V W °C Unit A Rev. 1.01 page 1 2006-02-14 www.DataSheet4U.com IPB06CNE8N G IPI06CNE8N G IPP06CNE8N G Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient R thJC R thJA minimal footprint 6 cm2 cooling area5) 0.7 62 40 K/W Electrical characteristics, at T j=25 °C, unless otherw...