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IPB080N06N G
IPP080N06N G
OptiMOS® Power-Transistor
Features Low gate charge for fast switching applications N-channel enhancement - normal level 175 °C operating temperature Avalanche rated Pb-free lead plating, RoHS compliant
Product Summary V DS R DS(on),max ID
SMDversion
60 7.7 80
V mΩ A
Type
IPB080N06N G
IPP080N06N...
