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IPB16CNE8N G IPI16CNE8N G
IPD16CNE8N G IPP16CNE8N G
OptiMOS®2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
Product Summary V DS R DS(on),max (TO252) ID 85 16 53 V mΩ A
• Ideal for high-frequency switching and synchronous rectification Type IPB16CNE8N G IPD16CNE8N G IPI16CNE8N G IPP16CNE8N G
Package Marking
PG-TO263-3 16CNE8N
PG-TO252-3 16CNE8N
PG-TO262-3 16CNE8N
PG-TO220-3 16CNE8N
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1
1)
Symbol Conditions ID I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C T C=25 °C T C=100 °C T C=25 °C I D=53 A, R GS=25 Ω I D=53 A, V DS=68 V, di /dt =100 A/µs, T j,max=175 °C
Value 53 38 212 107 6 ±20 100 -55 ... 175 55/175/56
Unit A
mJ kV/µs V W °C
J-STD20 and JESD22 see figure 3
2)
3)
Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
Rev. 1.01
page 1
2006-02-16
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IPB16CNE8N G IPI16CNE8N G
Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal resistance, junction ambient (TO252) R thJC R thJA minimal footprint 6 cm2 cooling area4) minimal footprint 6 cm2 cooling area4) -
IPD16CNE8N G IPP16CNE8N G
Unit max.
Values typ.
1.5 62 40 75 50
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=61 µA V DS=68 V, V GS=0 V, T j=25 °C V DS=68 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=53 A, (TO252) V GS=10 V, I D=53 A, (TO263) V GS=10 V, I D=53 A, (TO220, TO262) Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=53 A 85 2 3 0.1 4 1 µA V
-
10 1 12.2
100 100 16 nA mΩ
-
12.4
16.2
33
12.7 1.2 65
16.5 Ω S
4)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.01
page 2
2006-02-16
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IPB16CNE8N G IPI16CNE8N G
Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode for.