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IPB160N04S2L-03
OptiMOS® - T Power-Transistor
Features • N-channel Logic Level - Enhancement mode ...
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IPB160N04S2L-03
OptiMOS® - T Power-
Transistor
Features N-channel Logic Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested
Product Summary V DS R DS(on),max ID 40 2.7 160 V mΩ A
PG-TO263-7-3
Type IPB160N04S2L-03
Package PG-TO263-7-3
Ordering Code SP0002-18153
Marking P2N04L03
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C2) Pulsed drain current2) Avalanche energy, single pulse I D,pulse E AS V GS Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 P tot T j, T stg T C=25 °C T C=25 °C I D=80 A, R GS=25 Ω Value 160 160 640 810 ±20 300 -55 ... 175 55/175/56 mJ V W °C Unit A
Rev. 1.0
page 1
2006-03-02
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IPB160N04S2L-03
Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D=1 mA V GS(th) V DS=V GS, I D=250 µA V DS=40 V, V GS=0 V, T j=25 °C V DS=40 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=0 V V GS=4.5 V, I D=80 ...
