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IPI100N06S3-03 Dataheets PDF



Part Number IPI100N06S3-03
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPI100N06S3-03 DatasheetIPI100N06S3-03 Datasheet (PDF)

www.DataSheet4U.com IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 3.0 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-0.

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www.DataSheet4U.com IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 OptiMOS®-T Power-Transistor Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (lead free) • Ultra low Rds(on) • 100% Avalanche tested • ESD Class 3 (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 3.0 100 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB100N06S3-03 IPI100N06S3-03 IPP100N06S3-03 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-87982 SP0000-87992 SP0000-87980 Marking 3PN0603 3PN0603 3PN0603 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=50 A Value Unit A 100 100 400 690 55 ±20 300 -55 ... +175 55/175/56 mJ V V W °C Rev. 1.0 page 1 2005-09-16 www.DataSheet4U.com IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) V DS=V GS, I D=230 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I GSS RDS(on) V GS=20 V, V DS=0 V V GS=10 V, I D=80 A V GS=10 V, I D=80 A, SMD version 55 2.1 3.0 4.0 V 0.5 62 62 40 K/W Values typ. max. Unit Zero gate voltage drain current I DSS - 0.01 1 µA - 1 1 2.8 2.5 100 100 3.3 3 nA mΩ Rev. 1.0 page 2 2005-09-16 www.DataSheet4U.com IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions min. Dynamic characteristics2) Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics2) Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode continous forward current2) Diode pulse current2) Diode forward voltage IS I S,pulse V SD T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=27.5 V, I F=I S, di F/dt =100 A/µs 0.6 0.9 100 400 1.3 V A Q gs Q gd Qg V plateau V DD=11 V, I D=80 A, V GS=0 to 10 V 130 70 320 5.6 480 V nC C iss C oss Crss t d(on) tr t d(off) tf V DD=27.5 V, V GS=10 V, I D=80 A, R G=1.3 Ω V GS=0 V, V DS=25 V, f =1 MHz 21620 3290 3140 54 67 77 60 ns pF Values typ. max. Unit Reverse recovery time2) t rr - 60 ns Reverse recovery charge2) 1) Q rr - 95 - nC Current is limited .


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