IPP25N06S3-25

www.DataSheet4U.com IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 OptiMOS®-T Power-Transistor Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (lead free) Ultra low Rds(on) 100% Avalanche tested ESD Class 1C (HBM) EIA/JESD22-A114-B Product Summary V DS R DS(on),max (SMD version) ID 55 24.8 25 V mΩ A PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Type IPB25N06S3-25 IPI25N06S3-25 IPP25N06S3-25 Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Ordering Code SP0000-88000 SP0000-87997 SP0000-88001 Marking 3N0625 3N0625 3N0625 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse3) Drain gate voltage2) Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS V DG V GS P tot T j, T stg T C=25 °C T C=25 °C I D=12 A Value 25 23 100 60 55 ±20 48 -55 ... +175 55/175/56 mJ V V W °C Unit A Rev. 1.0 page 1 2006-04-03 www.DataSheet4U.com IPB25N06S3-25 IPI25N06S3-25, IPP25N06S3-25 Parameter Symbol Conditions min. Thermal characteristics2) Thermal resistance, junction - case Thermal resistance, junction ambient, leaded SMD version, device on PCB R thJC R thJA R thJA minimal footprint 6 cm2 cooling area5) Electrical characteristics, at T j=25 °C, unless otherwise...