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IPP070N06NG Dataheets PDF



Part Number IPP070N06NG
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet IPP070N06NG DatasheetIPP070N06NG Datasheet (PDF)

www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N G Type IPB066N06N G Package IPP066N06N G Marking Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1 Marking P-TO220-3-1 066N06N 070N06N.

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www.DataSheet4U.com IPB070N06N G IPP070N06N G OptiMOS® Power-Transistor Features • Low gate charge for fast switching applications • N-channel enhancement - normal level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant Product Summary V DS R DS(on),max ID SMDversion 60 6.7 80 V mΩ A Type IPB070N06N G IPP070N06N G Type IPB066N06N G Package IPP066N06N G Marking Package P-TO263-3-2 P-TO263-3-2 070N06N P-TO220-3-1 Marking P-TO220-3-1 066N06N 070N06N 066N06N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C1) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) 2) Value 80 80 320 530 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C2) I D=80 A, R GS=25 Ω I D=80 A, V DS=48 V, di /dt =200 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 250 -55 ... 175 55/175/56 Current is limited by bondwire; with an R thJC=0.6 K/W the chip is able to carry 127 A. See figure 3 Rev. 1.01 page 1 2006-06-19 www.DataSheet4U.com IPB070N06N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D=1 mA V GS(th) I DSS V DS=V GS, I D=180 µA V DS=60 V, V GS=0 V, T j=25 °C V DS=60 V, V GS=0 V, T j=125 °C Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=20 V, V DS=60 V V GS=10 V, I D=80 A, V GS=10 V, I D=80 A, SMD version Gate resistance Transconductance RG g fs |V DS|>2|I D|R DS(on)max, I D=80 A 60 2.1 3.0 0.01 - IPP070N06N G Unit max. Values typ. 0.6 62 40 K/W 4 1 V µA - 1 100 49 1 5.9 5.6 1.5 98 100 7 6.7 - nA mΩ Ω S 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.01 page 2 2006-06-19 www.DataSheet4U.com IPB070N06N G Parameter Symbol Conditions min. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics4) Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge 4) IPP070N06N G Unit max. Values typ. C iss C oss C rss t d(on) tr t d(off) tf V DD=30 V, V GS=10 V, I D=80 A, R G=3.3 Ω V GS=0 V, V DS=30 V, f =1 MHz - 3100 860 210 16 37 61 36 4100 1100 315 24 56 91 54 pF ns Q gs Q g(th) Q gd Q sw Qg V plateau Q oss V DD=30 V, V GS=0 V V DD=30 V, I D=80 A, V GS=0 to 10 V - 16 9 39 46 89 5.3 40 21 12 59 68 118 54 nC V IS I S,pulse V SD t rr Q rr T C=25 °C V GS=0 V, I F=80 A, T j=25 °C V R=30 V, I F=I S, di F/dt =100 A/µs - 0.95 55 96 80 320 1.3 70 120 A V ns nC See figure 16 for gate charge parameter definition Rev. 1.01 page 3 2006-06-19 www.DataSheet4U.com IPB070N06N G 1 Power dissipation P tot=f(T C) 2 Drain current I D=f(T C); V GS≥10 V IPP070N06N G 300 90 80 250 70 200 60 50 40 30 20 50 10 0 0 50 100 150 200 0 0 50 100 150 200 P tot [W] 150 100 T C [°C] I D [A] T C [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 1 µs limited by on-state resistance 10 µs 100 µs 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 100 102 1 ms DC 10 ms 0.5 Z thJC [K/W] 0.2 I D [A] 10 1 10 -1 0.1 0.05 100 0.02 0.01 single pulse 10-1 10 -1 10-2 10 0 10 1 10 2 10-5 10-4 10-3 10-2 10-1 100 V DS [V] t p [s] Rev. 1.01 page 4 2006-06-19 www.DataSheet4U.com IPB070N06N G 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 240 220 200 180 160 10 V 7V 6.5 V IPP070N06N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 30 28 26 24 22 20 5V 5.5 V 140 6V R DS(on) [mΩ ] 18 16 14 12 10 8 6 I D [A] 120 100 80 60 40 20 0 0 1 2 3 4 5 5V 5.5 V 6V 6.5 V 7V 10 V 4 2 0 0 20 40 60 80 100 120 V DS [V] I D [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 140 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 100 120 80 100 60 80 60 g fs [S] 40 20 0 0 1 2 175 °C I D [A] 40 20 0 3 4 5 6 7 0 20 40 60 80 V [V] GS 25 °C I D [A] Rev. 1.01 page 5 2006-06-19 www.DataSheet4U.com IPB070N06N G 9 Drain-source on-state resistance R DS(on)=f(T j); I D=80 A; V GS=10 V 10 Typ. gate threshold voltage V GS(th)=f(T j); V GS=V DS parameter: I D 20 4 3.5 IPP070N06N G 1800 µA .


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