SD1455
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZA...
SD1455
RF & MICROWAVE
TRANSISTORS TV/LINEAR APPLICATIONS
170 - 230 MHz 25 VOLTS IMD − 55dB COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST www.DataSheet4U.com RESISTORS DESIGNED FOR HIGH POWER LINEAR OPERATION P OUT = 20 W MIN. WITH 8.0 dB GAIN
. . . . . . . . .
.500 4L STUD (M130) epoxy sealed ORDER CODE SD1455 BRANDING SD1455
PIN CONNECTION
DESCRIPTION The SD1455 is a gold metallized epitaxial silicon
NPN planar
transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
VCEO VCES VEBO IC PDISS TJ T STG
Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
35 60 4.0 8.0 140 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
July 1993
1.5
°C/W
1/4
SD1455
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCER BVCEO BVEBO ICES hFE DYNAMIC
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IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 50 V VCE = 5 V
IE = 0 mA RBE = 10 Ω IB = 0 mA IC = 0 mA VBE = 0 V IC = 1 A
65 60 35 4.0 — 20
— — — — — —
— — — — 5 120
V V V V mA —
Symbol
Test Conditions
Value Min. Typ. Max.
Unit
POUT GP IMD3* COB
Note:
f = 225 MHz f =...