SD1459
RF & MICROWAVE TRANSISTORS TV/LINEAR APPLICATIONS
170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH S...
SD1459
RF & MICROWAVE
TRANSISTORS TV/LINEAR APPLICATIONS
170 - 230 MHz 28 VOLTS COMMON EMITTER GOLD METALLIZATION HIGH SATURATED POWER CAPABILITY DIFFUSED EMITTER BALLAST RESISTORS www.DataSheet4U.com P OUT = 20 W MIN. WITH 7.5 dB GAIN
. . . . . . .
.500 Dia .550 4L STUD (M164) epoxy sealed ORDER CODE SD1459 BRANDING SD1459
PIN CONNECTION
DESCRIPTION The SD1459 is a gold metallized epitaxial silicon
NPN planar
transistor using diffused emitter ballast resistors for high linearity Class A operation in VHF and Band III television transmitters and transposers. ABSOLUTE MAXIMUM RATINGS (T case = 25 ° C)
Symbol Parameter Value Unit
1. Collector 2. Emitter
3. Base 4. Emitter
VCBO VCEO VEBO IC PDISS TJ T STG
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation Junction Temperature Storage Temperature
60 30 4.0 16 150 +200 − 65 to +150
V V V A W °C °C
THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance
September 9, 1993
1.2
°C/W
1/5
SD1459
ELECTRICAL SPECIFICATIONS (T case = 25 ° C) STATIC
Symbol Test Conditions Value Min. Typ. Max. Unit
BVCBO BVCEO BVCER BVEBO hFE
IC = 100 mA IC = 100 mA IC = 100 mA IE = 20 mA VCE = 5 V
IE = 0 mA IB = 0 mA RBE = 10Ω IC = 0 mA IC = 1 A
60 30 60 4.0 10
— — — — —
— — — — 120
V V V V —
DYNAMIC
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Symbol
Test Conditions
Value Min. Typ. Max.
Unit
POUT GP COB
f = 225 MHz f = 225 MHz f = 1 MHz
VCE = 28 V VCE = 28 V VCB = 30 V VCE = 28 V
IC = 3.5 A IC = 3.5 A ...