EDR2518ABSE

PRELIMINARY DATA SHEET 288M bits Direct Rambus DRAM EDR2518ABSE (512K words × 18 bits × 32s banks) Description The EDR2518AB (Direct RDRAM) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high bandwidth and low latency are required. The EDR2518AB is 1066MHz 288Mbits Direct Rambus DRAM (RDRAM), organized as 16M words by 18 bits. The use of Rambus Signaling Level (RSL) technology permits 800MHz to 1066MHz transfer rates while using www.DataSheet4U.com conventional system and board design technologies. Direct RDRAM devices are capable of sustained data transfers at 0.9375ns per two bytes (7.5ns per sixteen bytes). The architecture of the Direct RDRAM devices allows the highest sustained bandwidth for multiple, simultaneous randomly addressed memory transactions. The separate control and data buses with independent row and column control yield over 95% bus efficiency. The Direct RDRAM devices 32 banks support up to four simultaneous transactions. System oriented features for mobile, graphics and large memory systems include power management, byte masking. It is offered in a CSP horizontal package suitable for desktop as well as low-profile add-in card and mobile applications. Direct RDRAM devices operate from a 2.5V supply. Features Highest sustained bandwidth per DRAM device — 2.1 GB/s sustained data transfer rate — Separate control and data bu...