SPB30N03L

SPP30N03L SIPMOS® Power Transistor Features N channel Enhancement mode Product Summary Drain source voltage Drain-Source on-state resistance Continuous drain current VDS ID 30 30 V A RDS(on) 0.018 Ω Avalanche rated Logic Level dv/dt rated www.DataSheet4U.com 175°C operating temperature Type SPP30N03L SPB30N03L Package Ordering Code Packaging Pin 1 G Pin 2 Pin 3 D S P-TO220-3-1 Q67040-S4737-A2 Tube P-TO263-3-2 Q67040-S4143-A3 Tape and Reel Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current Symbol Value 30 28 120 145 7.5 6 kV/µs mJ Unit A ID TC = 25 °C, 1) TC = 100 °C Pulsed drain current IDpulse EAS EAR dv/dt TC = 25 °C Avalanche energy, single pulse ID = 30 A, VDD = 25 V, RGS = 25 Ω Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt IS = 30 A, VDS = 24 V, di/dt = 200 A/µs, Tjmax = 175 °C Gate source voltage Power dissipation VGS Ptot T j , Tstg ±14 75 -55... +175 55/175/56 V W °C TC = 25 °C Operating and storage temperature IEC climatic category; DIN IEC 68-1 1 Semiconductor Group SPP30N03L Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint www.DataSheet4U.com Symbol min. Values typ. max. 2 62 62 40 Unit RthJC RthJA RthJA - K/W @ 6 cm 2 cooling area2) Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drai...