POWER TRANSISTORS. 2N3055 Datasheet

2N3055 TRANSISTORS. Datasheet pdf. Equivalent

Part 2N3055
Description SILICON PLANAR POWER TRANSISTORS
Feature Transys Electronics L I M I T E D SILICON PLANAR POWER TRANSISTORS 2N3055 NPN MJ2955 PNP TO-3 Meta.
Manufacture TRANSYS
Datasheet
Download 2N3055 Datasheet



2N3055
Transys
Electronics
LIMITED
SILICON PLANAR POWER TRANSISTORS
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
General Purpose Switching and Amplifier Applications
ABSOLUTE MAXIMUM RATINGS
DwEwSwC.DRatIaPSThIeOetN4U.com
Collector Base Voltage
Collector Emitter Voltage
Collector Emitter Voltage(RBE=100)
Emitter Base Voltage
Collector Current Continuous
Base Current
Power Dissipation @ Tc=25ºC
Derate Above 25ºC
Operating And Storage Junction
Temperature Range
SYMBOL
VCBO
VCEO
VCER
VEBO
IC
IB
Ptot
Tj, Tstg
VALUE
100
60
70
7
15
7
115
0.657
- 65 to +200
THERMAL RESISTANCE
Junction to Case
Rth(j-c)
1.52
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
DESCRIPTION
Collector Emitter Sustaing Voltage
Collector Emitter Sustaing Voltage
Collector Cut Off Current
SYMBOL
VCEO(sus)*
VCER(sus)*
ICEX
TEST CONDITION
IC=200mA, IB=0
IC=200mA, RBE=100
VCE=100V, VBE=(off)=1.5V
Collector Cut Off Current
Emitter Cut Off Current
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
ICEO
IEBO
VCE(Sat) *
VBE(on) *
hFE*
Tc=150ºC
VCE=100V, VBE=(off)=1.5V
VCE=30V, IB=0
VBE=7V, IC=0
IC=4A, IB=400mA
IC=10A, IB=3.3A
IC=4A, VCE=4V
IC=4A, VCE=4V
IC=10A, VCE=4V
MIN MAX
60
70
1.0
5.0
0.7
5.0
1.1
3.0
1.5
20 70
5
UNITS
V
V
V
V
A
A
W
W/ºC
ºC
ºC/W
UNITS
V
V
mA
mA
mA
V
V



2N3055
SILICON PLANAR POWER TRANSISTOR
2N3055 NPN
MJ2955 PNP
TO-3
Metal Can Package
ELECTRICAL CHARACTERISTICS (TC=25ºC unless specified otherwise)
Second Breakdown
DESCRIPTION
Second Breakdown Collector Current
with Base Forward Biased
SYMBOL
TEST CONDITION
IS/b VCE=40V,t=1.0 s,Nonrepetitive
MIN
2.87
Dynamic Characteristics
Current Gain - Bandwidth Product
SmwawllwS.DigatnaSahleCetu4Urr.econmt Gain
Small Signal Current Gain Cutoff
Frequency
fT
IC=0.5A, VCE=10V, f=1MHz
2.5
hfe
IC=1A, VCE=4V, f=1KHz
15
fhfe
IC=1A, VCE=4V, f=1KHz
10
*Pulse Test: Pulse Width <300µs, Duty Cycle <2%
MAX
120
UNITS
A
MHz
KHz





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