2SK3376MFV

2SK3376MFV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3376MFV For ECM Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.32±0.05 3 2 0.13±0.05 0.8±0.05 Unit: mm Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD (Note 1) Tj Tstg Rating -20 10 150 125 −55~125 Unit 1.2±0.05 0.8±0.05 V mA mW °C °C 0.4 1 www.DataSheet4U.com Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board 0.5±0.05 0.4 VESM 1.Drain 2.Source 3.Gate 2-1L1C JEDEC JEITA TOSHIBA Weight: 1.5mg (typ.) 0.5mm 0.45mm 0.45mm 0.4mm IDSS CLASSIFICATION A-Rank 80 to 200µA B-Rank 170 to 300µA C-Rank 270 to 480µA BK-Rank 150 to 350µA Marking Type Name Equivalent Circuit D 3 IDSS Classification Symbol A :A -Rank B :B-Rank , BK-Rank C :C-Rank G S 1 2007-11-01 2SK3376MFV Electrical ...