2SK3376TK
TOSHIBA Field Effect Transistor Silicon N Channel Junction Type
2SK3376TK
For ECM
• Application for Ultra-com...
2SK3376TK
TOSHIBA Field Effect
Transistor Silicon N Channel Junction Type
2SK3376TK
For ECM
Application for Ultra-compact ECM
0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05
Unit: mm
Absolute Maximum Ratings (Ta=25°C)
0.45 0.45 1.4±0.05
Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature www.DataSheet4U.com Storage temperature range
Symbol VGDO IG PD Tj Tstg
Rating -20 10 100 125 −55~125
Unit V mA mW °C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
0.395±0.03
°C
0.9±0.1
1
TESM3 JEDEC JEITA TOSHIBA
1.Drain 2.Source 3.Gate 2-1R1A
Weight: 2.2mg (typ.)
IDSS CLASSIFICATION A-Rank 80 to 200µA B-Rank 170 to 300µA C-Rank 270 to 480µA BK-Rank 150 to 350µA
Marking Type Name
Equivalent Circuit
D
3
IDSS Classification Symbol A :A -Rank B :B-Rank , BK-Rank C :C-Rank
G
S
1
2007-11-01
2SK3376TK
Electrical Characteristics (A-Rank IDSS Ta=25°C)
Characteristic Drain Cur...