C5706 Transistor Datasheet

C5706 Datasheet, PDF, Equivalent


Part Number

C5706

Description

PNP / NPN Epitaxial Planar Silicon Transistor

Manufacture

Sanyo Semiconductor

Total Page 5 Pages
Datasheet
Download C5706 Datasheet


C5706
Ordering number : ENN6912
2SA2039 / 2SC5706
PNP / NPN Epitaxial Planar Silicon Transistors
2SA2039 / 2SC5706
High Current Switching Applications
Features
DC-DC converter, relay drivers, lamp drivers,
motor drivers, strobes.
Features
Adoption of FBET, MBIT process.
Large current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
w w w . D at aHSigh ealelotw4aUbl.ecpoowmer dissipation.
Package Dimensions
unit : mm
2045B
[2SA2039 / 2SC5706]
6.5
5.0 2.3
4 0.5
0.85
0.7
0.6
12 3
2.3 2.3
1.2
0.5
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP
Package Dimensions
unit : mm
2044B
[2SA2039 / 2SC5706]
6.5 2.3
5.0 0.5
4
0.85
1
0.6
2
3
2.3 2.3
0.5
1.2
0 to 0.2
1 : Base
2 : Collector
3 : Emitter
4 : Collector
SANYO : TP-FA
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
30101 TS IM TA-3232 No.6912-1/5

C5706
2SA2039 / 2SC5706
Specifications
Note*( ) : 2SA2039
Absolute Maximum Ratings at Ta=25°C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Base Current
Collector Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
Tc=25°C
Conditions
Electrical Characteristics at Ta=25°C
www.DataSheet4U.com
Parameter
Symbol
Conditions
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-On Time
Storage Time
Fall Time
ICBO
IEBO
hFE
fT
Cob
VCE(sat)
VBE(sat)
V(BR)CBO
V(BR)CES
V(BR)CEO
V(BR)EBO
ton
tstg
tf
VCB=(--)40V, IE=0
VEB=(--)4V, IC=0
VCE=(--)2V, IC=(--)500mA
VCE=(--)10V, IC=(--)500mA
VCB=(--)10V, f=1MHz
IC=(--)1A, IB=(--)50mA
IC=(--)2A, IB=(--)100mA
IC=(--)2A, IB=(--)100mA
IC=(--)10µA, IE=0
IC=(--)100µA, RBE=0
IC=(--)1mA, RBE=
IE=(--)10µA, IC=0
See specified test circuit.
See specified test circuit.
See specified test circuit.
Swicthing Time Test Circuit
PW=20µs
D.C.1%
INPUT
IB1
IB2
VR10 RB
50+
100µF
OUTPUT
+
470µF
25
VBE= --5V
VCC=25V
10IB1= --10IB2= IC=1A
For PNP, the polarity is reversed.
Ratings
(--50)80
(--50)80
(--)50
(--)6
(--)5
(--)7.5
(--)1.2
0.8
15
150
--55 to +150
Unit
V
V
V
V
A
A
A
W
W
°C
°C
Ratings
min typ max
(--)1
(--)1
200 560
(360)400
(24)15
(--115)90 (--195)135
(--255)160 (--430)240
(--)0.89
(--)1.2
(--50)80
(--50)80
(--)50
(--)6
(30)35
(230)300
(15)20
Unit
µA
µA
MHz
pF
mV
mV
V
V
V
V
V
ns
ns
ns
No.6912-2/5


Features Ordering number : ENN6912 2SA2039 / 2SC 5706 PNP / NPN Epitaxial Planar Silicon Transistors 2SA2039 / 2SC5706 High Cu rrent Switching Applications Features • Package Dimensions unit : mm 2045B [2SA2039 / 2SC5706] 6.5 5.0 4 DC-DC c onverter, relay drivers, lamp drivers, motor drivers, strobes. Features Adopt ion of FBET, MBIT process. • Large cu rrent capacitance. • Low collector-to -emitter saturation voltage. • High-s peed switching. High allowable w w w . D a• t a She e t 4 U . cpower o m dis sipation. • 1.5 2.3 0.5 0.85 0.7 5.5 7.0 0.8 1.6 1.2 0.6 7.5 0.5 1 2 3 1 : Base 2 : Collector 3 : Em itter 4 : Collector 2.3 2.3 SANYO : T P Package Dimensions unit : mm 2044B [ 2SA2039 / 2SC5706] 6.5 5.0 4 2.3 1.5 0.5 5.5 7.0 0.85 0.5 1 0.6 0.8 2 3 2.5 1.2 1.2 0 to 0.2 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA 2.3 2.3 Any and all SA NYO products described or contained her ein do not have specifications that can handle applications that require ex.
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