D2058

KSD2058 KSD2058 Low Frequency Power Amplifier 1 TO-220F 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter VCBO VCEO VEBO IC IB PC PC TJ TSTG Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (Ta=25°C) Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Electrical Characteristics TC=25°C unless otherwise noted Symbol Parameter Test Condition ICBO IEBO VCEO hFE VCE(Sat) VBE(on) fT Cob tON tSTG tF Collector Cut-off Current Emitter Cut-off Current Collector-Emitter Breakdown Voltage DC Current Gain Collector-Emitter Saturation Voltage Base-Emitter ON Voltage Current Gain Bandwidth Product Output Capacitance Turn ON Time Storage Time Fall Time VCB = 60V, IE = 0 VEB = 7V, IC = 0 IC = 50mA, IB = 0 VCE = 5V, IC = 0.5A IC = 2A, IB = 0.2A VCE = 5V, IC = 0.5A VCE = 5V, IC = 0.5A VCB = 10V, f = 1MHz VCC = 30V, IC = 2A IB1 = - IB2 = 0.2A RL = 15Ω hFE Classification Classification hFE O 60 ~ 120 Y 100 ~ 200 Value 60 60 7 3 0.5 1.5 25 150 - 55 ~ 150 Units V V V A A W W °C °C Min. 60 8 Typ. 3 35 0.65 1.3 0.65 Max. 10 1 Units µA mA V 1.5 V V 0.4 MHz pF µs µs µs G 150 ~ 300 ©2000 Fairchild Semiconductor International Rev. A, February 2000 KSD2058 Typical Characteristics Ic[A], COLLECTOR CURRENT 3.0 IB = 90mA IB = 80mA 2.5 2.0 1.5 IB = 70mA IB = 60mA IB = 50mA IB = 40mA IB = 3...