MT29F8G08FABWP

2, 4, 8Gb: x8/x16 Multiplexed NAND Flash Memory Features NAND Flash Memory MT29F2G08AABWP/MT29F2G16AABWP MT29F4G08BABWP/MT29F4G16BABWP MT29F8G08FABWP Features Organization: Page size: x8: 2,112 bytes (2,048 + 64 bytes) x16: 1,056 words (1,024 + 32 words) Block size: 64 pages (128K + 4K bytes) Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks; 8Gb: 8,192 blocks Read performance: Random read: 25µs Sequential read: 30ns (3V x8 only) Write performance: Page program: 300µs (TYP) Block erase: 2ms (TYP) Endurance: 100,000 PROGRAM/ERASE cycles Data retention: 10 years First block (block address 00h) guaranteed to be valid without ECC (up to 1,000 PROGRAM/ERASE cycles) VCC: 2.7V–3.6V Automated PROGRAM and ERASE Basic NAND command set: PAGE READ, RANDOM DATA READ, READ ID, READ STATUS, PROGRAM PAGE, RANDOM DATA INPUT, PROGRAM PAGE CACHE MODE, INTERNAL DATA MOVE, INTERNAL DATA MOVE with RANDOM DATA INPUT, BLOCK ERASE, RESET New commands: PAGE READ CACHE MODE READ UNIQUE ID (contact factory) READ ID2 (contact factory) Operation status byte provides a software method of detecting: PROGRAM/ERASE operation completion PROGRAM/ERASE pass/fail condition Write-protect status Ready/busy# (R/B#) pin provides a hardware method of detecting PROGRAM or ERASE cycle completion PRE pin: prefetch on power up WP# pin: hardware write protect Figure 1: 48-Pin TSOP Type 1 Options Marking Density: 2Gb (single die) MT29F2GxxAAB 4Gb (dual-die st...