PROCESS
CPS041
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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GLASS PASSIVATED MESA 41 x 41 MILS 8.7 MILS ± 0.6 MILS 18 x 8 MILS 7.1 x 7.1 MILS Al - 45,000Å Au - 10,000Å
GEOMETRY GROSS DIE P...
