Silicon Controlled Rectifier Sensitive Gate SCR Chip
PROCESS
CPS053
Silicon Controlled Rectifier
2.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thic...
Description
PROCESS
CPS053
Silicon Controlled Rectifier
2.0 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
www.DataSheet4U.com
Glass Passivated Mesa 53 x 53 MILS 8.7 MILS 20 x 10 MILS 7.9 x 7.9 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER 3,884 PRINCIPAL DEVICE TYPES CS92-2M Series CS223-2M Series MCR22-6 Series
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- January 2006)
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