PROCESS
CPS057
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
www.DataSheet4U.com
GLASS PASSIVATED MESA 57 x 57 MILS 8.7 MILS ± 0.6 MILS 24 x 14 MILS 7.9 x 7.9 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY G...