Silicon Controlled Rectifier 12 Amp Sensitive Gate SCR Chip
PROCESS
CPS110
Silicon Controlled Rectifier
12 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thick...
Description
PROCESS
CPS110
Silicon Controlled Rectifier
12 Amp Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
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Glass Passivated Mesa 110 x 110 MILS 8.7 MILS 80 x 40 MILS 31 x 31 MILS Al - 45,000Å Al/Mo/Ni/Ag - 32,000Å
GEOMETRY
GROSS DIER PER 4 INCH WAFER 876 PRINCIPAL DEVICE TYPES CS220-12M Series CSDD-12M Series
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R0 (4- January 2006)
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