Transistors
2SD1302
Silicon NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC convert...
Transistors
2SD1302
Silicon
NPN epitaxial planar type
For low-voltage output amplification For muting For DC-DC converter ■ Features
Low collector-emitter saturation voltage VCE(sat) Low ON resistance Ron High forward current transfer ratio hFE
0.7±0.1
Unit: mm
5.0±0.2 4.0±0.2
0.7±0.2 12.9±0.5
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) www.DataSheet4U.com Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 25 20 12 0.5 1 600 150 −55 to +150 Unit V V V A A mW °C °C
0.45+0.15 –0.1 2.5+0.6 –0.2 1 2 3 2.5+0.6 –0.2 0.45+0.15 –0.1
5.1±0.2
1: Emitter 2: Collector 3: Base TO-92-B1 Package
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector-base cutoff current (Emitter open) Forward current transfer ratio *1 Symbol VCBO VCEO VEBO ICBO hFE1 *2 hFE2 Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance (Common base, input open circuited) ON resistanse *3 VCE(sat) VBE(sat) fT Cob Ron Conditions IC = 10 µA, IE = 0 IC = 1 mA, IB = 0 IE = 10 µA, IC = 0 VCB = 25 V, IE = 0 VCE = 2 V, IC = 0.5 A VCE = 2 V, IC = 1 A IC = 0.5 A, IB = 20 mA IC = 0.5 A, IB = 50 mA VCB = 10 V, I...
