2SC4769. C4769 Datasheet

C4769 2SC4769. Datasheet pdf. Equivalent

C4769 Datasheet
Recommendation C4769 Datasheet
Part C4769
Description 2SC4769
Feature C4769; Ordering number:EN3665 NPN Triple Diffused Planar Silicon Transistor 2SC4769 Ultrahigh-Definition .
Manufacture Sanyo Semicon Device
Datasheet
Download C4769 Datasheet




Sanyo Semicon Device C4769
Ordering number:EN3665
NPN Triple Diffused Planar Silicon Transistor
2SC4769
Ultrahigh-Definition Color Display
Horizontal Deflection Output Applications
Features
· High speed (tf=100ns typ).
· High breakdown voltage (VCBO=1500V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
· On-chip damper diode.
Package Dimensions
unit:mm
2039D
[2SC4769]
16.0
3.4
5.6
3.1
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2.8
2.0 2.0
1.0
0.6
Specifications
123
5.45 5.45
1 : Base
2 : Collector
3 : Emitter
SANYO : TO-3PML
Absolute Maximum Ratings at Ta = 25˚C
Parameter
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Symbol
VCBO
VCEO
VEBO
IC
ICP
PC
Junction Temperature
Storage Temperature
Tj
Tstg
Tc=25˚C
Conditions
Ratings
1500
800
6
7
16
3
60
150
–55 to +150
Unit
V
V
V
A
A
W
W
˚C
˚C
Electrical Characteristics at Ta = 25˚C
Parameter
Symbol
Conditions
Collector Cutoff Current
Collector-to-Emitter Sastain Voltage
Emitter Cutoff Current
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
ICBO
ICES
VCEO(sus)
IEBO
VCE(sat)
VBE(sat)
VCB=800V, IE=0
VCE=1500V, RBE=0
IC=100mA, IB=0
VEB=4V, IC=0
IC=5A, IB=1.7A
IC=5A, IB=1.7A
* : The 2SC4769 is classified by 5A hFE as follows : hFE 3 to 5
Rank
1
4 to 6
2
5 to 8
3
Ratings
min typ
800
40
max
10
1.0
130
5
1.5
Unit
µA
mA
V
mA
V
V
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
12099HA (KT)/N130MH, JK (KOTO) No.3665–1/4



Sanyo Semicon Device C4769
Parameter
DC Current Gain
Diode Forward Voltage
Storage Time
Fall Time
Switching Time Test Circuit
2SC4769
Symbol
hFE1
hFE2
VF
tstg
tf
Conditions
VCE=5V, IC=1A
VCE=5V, IC=5A
IEC=7A
IC=4A, IB1=0.8A, IB2=–1.6A
IC=4A, IB1=0.8A, IB2=–1.6A
Ratings
min typ
8
3.0*
0.1
max
8.0*
2.0
3.0
0.2
Unit
V
µs
µs
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No.3665–2/4



Sanyo Semicon Device C4769
2SC4769
www.DataSheet4U.com
No.3665–3/4







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