DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µ PA1744TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA1744TP is N-...
DATA SHEET
MOS FIELD EFFECT
TRANSISTOR
µ PA1744TP
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The µ PA1744TP is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, and designed for high voltage applications such as DC/DC converter. www.DataSheet4U.com
PACKAGE DRAWING (Unit: mm)
8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8, 9: Drain
FEATURES
1.49 ±0.21
Low on-state resistance RDS(on) = 30 mΩ MAX. (VGS = 10 V, ID = 5.0 A) Low input capacitance Ciss = 3400 pF TYP. (VDS = 10 V, VGS = 0 V) Built-in gate protection diode Small and surface mount package (Power HSOP8)
1.44 TYP.
1 5.2 +0.17 –0.2
4 0.8 ±0.2 S
+0.10 –0.05
6.0 ±0.3 4.4 ±0.15
0.05 ±0.05
0.15
1.27 TYP. 0.40
1
+0.10 –0.05
0.10 S 0.12 M
2.9 MAX.
ORDERING INFORMATION
PART NUMBER PACKAGE Power HSOP8
8
2.0 ±0.2 9 4.1 MAX.
µ PA1744TP
5
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, Unless otherwise noted, all terminals are connected.)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
100 ±20 ±10 ±30 39 3.0 150 −55 to +150 10 10
V V A A W W °C °C A mJ
Gate Protection Diode Source Gate Body Diode
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note3 Note3
PT2 Tch Tstg IAS EAS
Notes 1. PW ≤ 10 µs, Duty Cy...