2N2646 2N2647
SILICON UNIJONCTION TRANSISTORS
Silicon Planar Unijunction Transistors have a structure resulting in lowe...
2N2646 2N2647
SILICON UNIJONCTION
TRANSISTORS
Silicon Planar Unijunction
Transistors have a structure resulting in lower saturation voltage, peak-point current and valley current as well as a much higher base-one peak pulse voltage. In addition, these www.DataSheet4U.com devices are much faster switches. The 2N2646 is intended for general purpose industrial applications where circuit economy is of primary importance, and is ideal for use in firing circuits for Silicon Controlled Rectifiers and other applications where a guaranteed minimum pulse amplitude is required. The 2N2647 is intended for applications where a low emitter leakage current and a low peak point emitter current (trigger current) are required and also for triggering high power SCR’s.
CASE
MAXIMUM RATINGS (*)
TJ=125°C unless otherwise noted
Symbol
VB1E VB2E IFRMS IEM PTOT TJ TSTG
Ratings
Base 1 – Emitter Voltage Base 2 – Emitter Voltage RMS Emitter Current Emitter Peak Current Total Power Dissipation Maximum Junction Storage Temperature Range
2N2646
30 30 50 2 300
2N2647
V V mA A mW
150 -55 to +175 °C
ELECTRICAL CHARACTERISTICS
TJ=25°C unless otherwise noted, RGK=1000Ω
Symbol
IEO V(BR)B1E
Ratings
Emitter Reverse Current Base 1 – Emitter Breakdown Voltage IE =100 µA
2N2646 – 2N2647
Min
Max 12 µA V
1/2
30
COMSET SEMICONDUCTORS
2N2646 2N2647
2N2646 – 2N2647
Symbol
RBBO
Ratings
Interbase Resistance VB1B2 = 3 V Intrinsic stand-off ratio VB1B2 = 10 V Emitter Saturation Voltage IE = 50 mA, VB1B2 = 1...