STM6913A

S T M6913A S amHop Microelectronics C orp. Dec.27 2004 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 30V F E AT UR E S ( m W ) Max ID 6A R DS (ON) S uper high dense cell design for low R DS (ON ). 28 @ V G S = 10V 56 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ T C =25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol V DS V GS ID IDM IS PD T J , T S TG Limit 30 20 6 30 1.7 2 -55 to 150 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M6913A E LE CTR ICAL CHAR ACTE R IS TICS (T A =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS c Condition V GS = 0V, ID = 250uA V DS = 24V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS = 4.5V,ID = 3A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.7 20 42 20 8 645 165 120 11.2 8.6 22.3 13.6 13.8 7.5 3.2 2.9 2.5 28 56 V m ohm m ohm Gate-Body Leakage ON CHAR ACTE R IS TICS b Gat...