STM6920A

S T M6920A S amHop Microelectronics C orp. Apr,08.2005 Dual N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S www.DataSheet4U.com 40V F E AT UR E S ( m W ) Max ID 5A R DS (ON) S uper high dense cell design for low R DS (ON ). 35 @ V G S = 10V 62 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous @ Ta -P ulsed b a S ymbol V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG Limit 40 20 5 4.2 20 1.7 2 1.44 -55 to 150 Unit V V A A A A W C Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 1 62.5 C /W S T M6920A N-Channel ELECTRICAL CHARACTERISTICS (T A = 25 C unless otherwise noted) Parameter 5 S ymbol BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS c Condition V GS = 0V, ID = 250uA V DS = 32V, V GS = 0V V GS = 20V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 6A V GS =4.5V, ID= 5A V DS = 5V, V GS = 10V V DS = 5V, ID = 6A Min Typ C Max Unit 40 1 V uA 100 nA 1 1.8 OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current www.DataSheet4U.com Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage D...