S T M6930
S amHop Microelectronics C orp. Arp,20 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect Transistor...
S T M6930
S amHop Microelectronics C orp. Arp,20 2005 ver1.2
Dual N-C hannel E nhancement Mode Field E ffect
Transistor
P R ODUC T S UMMAR Y
V DS S
www.DataSheet4U.com 55V
F E AT UR E S
( m W ) Max
ID
4.8A
R DS (ON)
S uper high dense cell design for low R DS (ON ).
45 @ V G S = 10V 65 @ V G S = 4.5V
R ugged and reliable. S urface Mount P ackage.
D1
8
D1
7
D2
6
D2
5
S O-8 1
1 2 3 4
S1
G1 S 2
G2
ABS OLUTE MAXIMUM R ATINGS (T A=25 C unless otherwise noted)
P arameter Drain-S ource Voltage R ating Drain-S ource Voltage Gate-S ource Voltage
a
S ymbol Vspike V DS V GS 25 C 70 C ID IDM IS PD T J , T S TG
d
Limit 60 55 25 4.8 4.1 30 1.7 2 1.44 -55 to 150
Unit V V V A A A A W C
Drain C urrent-C ontinuous @ Ta -P ulsed
b
Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange Ta= 25 C Ta=70 C
THE R MAL C HAR AC TE R IS TIC S
Thermal R esistance, Junction-to-Ambient a R JA
1
62.5
C /W
S T M6930
E LE CTR ICAL CHAR ACTE R IS TICS (T A 25 C unless otherwise noted)
Parameter
5
S ymbol
BV DS S IDS S IGS S V GS (th) R DS (ON) ID(ON) gFS C IS S C OS S CRSS Rg
c
Condition
V GS = 0V, ID = 250uA V DS = 44V, V GS = 0V V GS = 25V, V DS = 0V V DS = V GS , ID = 250uA V GS =10V, ID = 4.5A V GS =4.5V, ID= 4A V DS = 5V, V GS = 10V V DS = 5V, ID = 4.5A
Min Typ C Max Unit
55 1 V uA 100 nA 1.0 1.9 35 55 20 9 900 80 60 2 19 5 22 12 19 9 4 4.5 25 7 29 16 25 12 5 6 1170 104 78 2.5 45 65 V
m ohm m ohm
OFF CHAR ACTE R IS...
